The exciton transition energies in symmetric double GaAs/AlxGa1-xAs quantum wells

Date

1999-04-01

Author

Okan, SE
Aktas, S
Akbas, H
Tomak, Mehmet

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The exciton transition energies between valence and conduction subbands of symmetric double quantum wells are studied. To study the effect of geometry coupled wells of rectangular, graded and parabolic shapes are considered. A special emphasis is given to the study of crossover between the symmetric light-hole (e1-11) and the antisymmetric heavy-hole (e2-h2) transitions.

Subject Keywords

Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/39382

Journal

PHYSICA STATUS SOLIDI B-BASIC RESEARCH

DOI

https://doi.org/10.1002/(sici)1521-3951(199904)212:2<263::aid-pssb263>3.0.co;2-v

Collections

Department of Physics, Article

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Citation Formats

S. Okan, S. Aktas, H. Akbas, and M. Tomak, “The exciton transition energies in symmetric double GaAs/AlxGa1-xAs quantum wells,” PHYSICA STATUS SOLIDI B-BASIC RESEARCH, pp. 263–270, 1999, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39382.