The electronic band structure of Gan, GaAs and InxGa1-xAs1-yNy alloys

Date

2007-10-10

Author

Mohammad, Rezek
Katırcıoğlu, Şenay

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The electronic band structure of GaN and GaAs has been investigated by ETB to obtain the band gap bowing of InxGa1-xAs1-yNy alloys lattice matched to GaAs. The ETB method has been formulated for sp(3)d(2) basis and nearest neighbor interactions of the compounds, and its energy parameters have been derived from the results of the present first principles calculations carried out on GaN and GaAs. It has been found that the present ETB energy parameters are capable of producing the electronic band structure of corresponding compounds and the large bowing parameter of InGaAsN alloy.

Subject Keywords

Statistical and Nonlinear Physics, Condensed Matter Physics

URI

https://hdl.handle.net/11511/39666

Journal

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

DOI

https://doi.org/10.1142/s0217979207037922

Collections

Department of Physics, Article

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Citation Formats

R. Mohammad and Ş. Katırcıoğlu, “The electronic band structure of Gan, GaAs and InxGa1-xAs1-yNy alloys,” INTERNATIONAL JOURNAL OF MODERN PHYSICS B, pp. 4357–4375, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39666.