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The electronic band structure of Gan, GaAs and InxGa1-xAs1-yNy alloys

The electronic band structure of GaN and GaAs has been investigated by ETB to obtain the band gap bowing of InxGa1-xAs1-yNy alloys lattice matched to GaAs. The ETB method has been formulated for sp(3)d(2) basis and nearest neighbor interactions of the compounds, and its energy parameters have been derived from the results of the present first principles calculations carried out on GaN and GaAs. It has been found that the present ETB energy parameters are capable of producing the electronic band structure of corresponding compounds and the large bowing parameter of InGaAsN alloy.