Spatial distribution of light-emitting centers in Si-implanted SiO2

Date

2005-06-01

Author

Serincan, U
Aygun, G
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

128
views

0
downloads

Light emission from Si-implanted SiO2 layer is a well-known phenomenon. We demonstrated that samples which were implanted with Si-28 at a dose of 1.5 x 10(17) cm(-2) at 100 keV and annealed at 1050 degrees C for 2h exhibit two broad photoluminescence (PL) peaks at similar to 650 and 850 nm. The origin of these peaks was investigated by a controlled etch experiment in order to figure out the dependence of the PL spectrum on the location of the implanted Si atoms. It was found that the emission peak of 850 nm is correlated with the Si atom distribution in the matrix and hence with the distribution of Si nanocrystals formed upon annealing. while the emission centers for the 650 nm peak are located in the near surface region. In a parallel experiment, the dependence of the PL spectrum on the excitation wavelength was studied. PL spectrum shifted to higher energies with increasing photon energy due to the selective excitation of the light-emitting centers.

Subject Keywords

Biophysics, Atomic and Molecular Physics, and Optics, Biochemistry, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/40869

Journal

JOURNAL OF LUMINESCENCE

DOI

https://doi.org/10.1016/j.jlumin.2004.10.001

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

TL and OSL studies on gallium sulfide (GaS) single crystals Isik, M.; YÜKSEL, MEHMET; TOPAKSU, MUSTAFA; Hasanlı, Nızamı (Elsevier BV, 2020-09-01) Gallium sulfide (GaS) single crystals were investigated using thermoluminescence (TL) and optically stimulated luminescence (OSL) measurements. TL experiments performed in the room temperature (RT)-450 °C range presented a glow curve consisting in six single discrete peaks. Analyses of TL glow curve by computerized glow curve deconvolution method showed that the trapping centers responsible for peaks are located at 0.98, 1.09, 1.15, 1.76, 1.87 and 1.90 eV. The order of kinetics found between 1 and 2 indicat...
Absorption edge and optical constants of layered structured Tl2Ga2Se3S single crystals Hasanlı, Nızamı (IOP Publishing, 2012-06-01) The optical properties of Tl2Ga2Se3S layered crystals have been studied through transmission and reflection measurements in the photon energy range 1.13-2.82 eV. The optical indirect and direct transitions with band gap energies of 2.15 and 2.54 eV, respectively, were determined from the analysis of absorption data at room temperature. The dispersion of refractive index is discussed in terms of the Wemple-DiDomenico single-effective oscillator model. The refractive index dispersion parameters, namely oscill...
Dispersive optical constants of Tl2InGaSe4 single crystals Qasrawi, A. F.; Hasanlı, Nızamı (IOP Publishing, 2007-09-01) The structural and optical properties of Bridgman method grown Tl2InGaSe4 crystals have been investigated by means of room temperature x-ray diffraction, and transmittance and reflectance spectral analysis, respectively. The x-ray diffraction technique has shown that Tl2InGaSe4 is a single phase crystal of a monoclinic unit cell that exhibits the lattice parameters of a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees . The optical data have revealed an indirect allowed transition band ...
Radiative damping of whistlers in a dense magnetoactive plasma waveguide Yilmaz, A; Oke, G; Rukhadze, A; Bilikmen, S (IOP Publishing, 1996-06-01) The absorption of whistler waves in a magnetized cylindrical plasma due to coupling with oblique Langmuir waves is investigated. Two types of mechanisms exist for whistler absorption. The first one is related to the excitation of Langmuir waves in the volume of the dense plasma and their subsequent absorption due to the electron collisions. The second one is the emission of Langmuir waves outside of the cylindrical plasma when it is surrounded by the rare plasma. The relation between these whistler absorpti...
Luminescence from silicon nanoparticles in SiO2: atomic force microscopy and transmission electron microscopy studies Mayandi, J.; Finstad, T. G.; Foss, S.; Thogersen, A.; Serincan, U.; Turan, Raşit (IOP Publishing, 2006-09-01) Si nanocrystals in thermal oxide films ( similar to 250 nm) were fabricated by 100 keV Si ion implantation at various doses followed by high temperature annealing. After annealing a sample implanted with a dose of 1 x 10(17) cm(-2) at 1050 degrees C for 2 h, a broad photoluminescence peak centred around 880 nm was observed. A dose of 5 x 10(16) cm(-2) yields a considerable blue shift of about 100 nm relative to the higher dose. Transmission electron microscopy and atomic force microscopy (AFM) are used to c...

Citation Formats

U. Serincan, G. Aygun, and R. Turan, “Spatial distribution of light-emitting centers in Si-implanted SiO2,” JOURNAL OF LUMINESCENCE, pp. 229–234, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40869.