Show/Hide Menu
Hide/Show Apps
anonymousUser
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Açık Bilim Politikası
Açık Bilim Politikası
Frequently Asked Questions
Frequently Asked Questions
Browse
Browse
By Issue Date
By Issue Date
Authors
Authors
Titles
Titles
Subjects
Subjects
Communities & Collections
Communities & Collections
Optimization of Silicon Nitride (SiN X ) Anti-reflective coating (arc) and passivation layers using industrial plasma enhanced chemical vapor deposition (pecvd) for perc type solar cells
Download
index.pdf
Date
2018-07-06
Author
Kökbudak, Gamze
Orhan, Efe
Es, Fırat
Semiz, Emel
Turan, Raşit
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
2
views
6
downloads
This study focuses on optimization of silicon nitride (SiN X ) Anti Reflective Coating (ARC) layer deposited on the front side of industrial Passivated Emitter and Rear Cell (PERC) type solar cells in an industrial tube type plasma enhanced chemical vapor deposition (PECVD) tool. Reflection and thickness optimization studies of ARC layer was carried out through a matrix composed of critical plasma parameters. Characterization of the layers were conducted via ellipsometry and reflectivity measurements for uniform coating with desired thickness and refractive index throughout the boat and within the wafers. Passivation property of our films was also tested through QSSPC lifetime measurements.
Subject Keywords
Industrial PECVD
,
Silicon nitride
,
Anti reflective coating
,
PERC
,
Solar cell
,
Low frequency direct plasma
URI
https://hdl.handle.net/11511/41181
DOI
https://doi.org/10.1109/pvcon.2018.8523918
Collections
Department of Physics, Conference / Seminar