Optimization of Silicon Nitride (SiN X ) Anti-reflective coating (arc) and passivation layers using industrial plasma enhanced chemical vapor deposition (pecvd) for perc type solar cells

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2018-07-06

Author

Kökbudak, Gamze
Orhan, Efe
Es, Fırat
Semiz, Emel
Turan, Raşit

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This study focuses on optimization of silicon nitride (SiN X ) Anti Reflective Coating (ARC) layer deposited on the front side of industrial Passivated Emitter and Rear Cell (PERC) type solar cells in an industrial tube type plasma enhanced chemical vapor deposition (PECVD) tool. Reflection and thickness optimization studies of ARC layer was carried out through a matrix composed of critical plasma parameters. Characterization of the layers were conducted via ellipsometry and reflectivity measurements for uniform coating with desired thickness and refractive index throughout the boat and within the wafers. Passivation property of our films was also tested through QSSPC lifetime measurements.

Subject Keywords

Industrial PECVD, Silicon nitride, Anti reflective coating, PERC, Solar cell, Low frequency direct plasma

URI

https://hdl.handle.net/11511/41181

DOI

https://doi.org/10.1109/pvcon.2018.8523918

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Department of Physics, Conference / Seminar

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Citation Formats

G. Kökbudak, E. Orhan, F. Es, E. Semiz, and R. Turan, “Optimization of Silicon Nitride (SiN X ) Anti-reflective coating (arc) and passivation layers using industrial plasma enhanced chemical vapor deposition (pecvd) for perc type solar cells,” 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41181.