"N" structure for type-II superlattice photodetectors

Date

2012-08-13

Author

Salihoglu, Omer
Muti, Abdullah
Kutluer, Kutlu
Tansel, Tunay
Turan, Raşit
ERGÜN, YÜKSEL
AYDINLI, ATİLLA

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In the quest to raise the operating temperature and improve the detectivity of type II superlattice (T2SL) photodetectors, we introduce a design approach that we call the "N structure." N structure aims to improve absorption by manipulating electron and hole wavefunctions that are spatially separated in T2SLs, increasing the absorption while decreasing the dark current. In order to engineer the wavefunctions, we introduce a thin AlSb layer between InAs and GaSb layers in the growth direction which also acts as a unipolar electron barrier. Unlike the symmetrical insertion of AlSb into GaSb layers, N design aims to exploit the shifting of the electron and hole wavefunctions under reverse bias. With cutoff wavelength of 4.3 mu m at 77 K, temperature dependent dark current and detectivity measurements show that the dark current density is 3.6 x 10(-9) A/cm(2), under zero bias. Photodetector reaches background limited infrared photodetection (BLIP) condition at 125 K with the BLIP detectivity (D-BLIP*) of 2.6 x 10(10) Jones under 300 K background and -0.3 V bias voltage. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745841]

Subject Keywords

Inas/gasb superlattices, Photodıodes

URI

https://hdl.handle.net/11511/41255

Collections

Department of Physics, Article