Passivation of type II InAs/GaSb superlattice photodetectors with atomic layer deposited Al2O3

Salihoglu, Omer
Muti, Abdullah
Kutluer, Kutlu
Tansel, Tunay
Turan, Raşit
We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free and low operation temperature with uniform coating of ALD technique leads to a conformal and defect free coverage on the side walls. This conformal coverage of rough surfaces also satisfies dangling bonds more efficiently while eliminating metal oxides in a self cleaning process of the Al2O3 layer. Al2O3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 x 10(13) Jones, respectively at 4 mu m and 77 K. Quantum efficiency (QE) was determined as %41 for these detectors.


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Ulucan, S; Aygun, G; Ozyuzer, L; Egilmez, M; Turan, Raşit (2005-02-01)
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We report on the fabrication and performance of vacuum-processed organic field effect transistors utilizing evaporated low-density polyethylene (LD-PE) as a dielectric layer. With C-60 as the organic semiconductor, we demonstrate low operating voltage transistors with field effect mobilities in excess of 4 cm(2)/Vs. Devices with pentacene showed a mobility of 0.16 cm(2)/Vs. Devices using tyrian Purple as semiconductor show low-voltage ambipolar operation with equal electron and hole mobilities of similar to...
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Kilit Dogan, E.; Yurtseven, Hasan Hamit (Springer Science and Business Media LLC, 2020-08-01)
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Integration of stoichiometric molybdenum trioxide (MoO 3-x ) as an effective hole transport layer (HTL) in solar cells is expected to reduce fabrication cost by eliminating the high temperature processes while maintaining high conversion efficiency. In this work we performed a systematic study to extract the electronic properties of vapor-phase deposited MoO 3-x thin film and MoO 3-x /crystalline silicon interface through capacitance and conductance analysis. Effect of MoO 3-x thickness as well as post depo...
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The reflectance spectra and refractive index of Nd:YAG laser-oxidized SiO2 layers with thicknesses from 15 to 75 nm have been investigated with respect to the laser beam energy density and substrate temperature. Thickness and refractive index of films have been determined from reflectance measurements at normal light incidence in the spectral range 300-800 nm. It was found that the oxide-growth conditions at higher substrate temperatures and laser powers greater than 3.36 J cm(-2) provides a better film qua...
Citation Formats
O. Salihoglu et al., “Passivation of type II InAs/GaSb superlattice photodetectors with atomic layer deposited Al2O3,” 2012, vol. 8353, Accessed: 00, 2020. [Online]. Available: