Metal-semiconductor junctions on p-type strained Si1-xGex layers

Date

1996-02-19

Author

Nur, O
Willander, M
Turan, Raşit
Sardela, MR
Hansson, GV

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

91
views

0
downloads

The electrical properties of Schottky junctions on high-quality p-type strained Si1-xGex layers have been studied for Ge fractions 0 less than or equal to x less than or equal to 0.24. A multicrystal high-resolution x-ray diffractometer was used to investigate the sample's quality and the strain state and to accurately determine the Ge fraction in the fabricated devices. Several different metals, having a wide range of barrier heights, were used to reach conclusions on the variation of barrier height with the Ge content in the grown strained Si1-xGex layers. It has been found that the Schottky barrier height decreases with increasing Ge fraction in the Si1-xGex layer for the different metals investigated. The change in the barrier height with x has been found to be directly correlated to the valence band discontinuity in the Si/Si1-xGex heterojunction. (C) 1996 American Institute of Physics.

Subject Keywords

Infrared Detectors, Barrier Height, Band Offsets, Heterojunction

URI

https://hdl.handle.net/11511/42690

Journal

APPLIED PHYSICS LETTERS

DOI

https://doi.org/10.1063/1.115720

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Low Schottky barrier junctions on strained p-Si1-xGex for infrared detection Nur, O; Willander, M; Turan, Raşit; Sardela, MR; Hansson, GV (IOP Publishing, 1997-01-01) Electrical properties of different low Schottky barrier junctions on high quality strained-Si1-xGex layers with 0 less than or equal to x less than or equal to 0.24 were studied. The investigated metals were Ir, Pt, Pd and Fe. In addition, PtSi/p-Si1-xGex junctions were also produced and characterized; the silicide was deposited by co-sputtering. High-resolution multi-crystal x-ray diffraction (HR-MCXRD) was used to investigate the sample quality and strain state of the MBE grown p-Si1-xGex layers and to ac...
Transient response of an infinite elastic medium containing a spherical cavity subjected to torsion Zakout, U; Akkas, Z; Tupholme, GE (2000-06-01) An exact closed-form solution is obtained for the transient response of an infinite isotropic elastic medium containing a spherical cavity subjected to torsional surface loading using the residual variable method. The main advantage of the present approach is that it eliminates the computational problems arising in the existing methods which are primarily based on Fourier or Laplace transformation techniques. Extensive numerical results for the circumferential displacements and shear stresses at various loc...
Current-voltage and capacitance-voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode OCAK, YUSUF SELİM; Kulakci, M.; KILIÇOĞLU, TAHSİN; Turan, Raşit; AKKILIÇ, KEMAL (2009-08-01) Electrical and interfacial properties of Sn/Methylene Blue (MB)/p-Si Schottky diode have been determined by using current-voltage (I-V) and capacitance-voltage (C-V) measurements of the device at room temperature. Cheung functions and modified Norde functions have been used to obtain the electrical characteristics such as barrier height and series resistance of the diode. It has been seen that the MB layer modifies the effective barrier height of the structure because the layer creates the physical barrier ...
Electrical and photoelectrical properties of Ag-In-Se thin films evaporated by e-beam technique ÇOLAKOĞLU, Tahir; Parlak, Mehmet (IOP Publishing, 2009-02-07) In this study, the electrical and photoelectrical properties of the Ag-In-Se thin films deposited by the e-beam technique have been investigated by carrying out temperature dependent conductivity, photoconductivity under different illumination intensities and photoresponse measurements between 380 and 1050 nm, as a function of annealing temperature. The measured conductivity values of the films at room temperature depending on the annealing temperatures vary in the range 1.9 x 10(-6)-5.2 Omega(-1) cm(-1). A...
Gas source molecular beam epitaxy growth and characterization of Ga0.51In0.49P/InxGa1-xAs/GaAs modulation-doped field-effect transistor structures Beşikci, Cengiz; Ozder, S; Sen, O; Jelen, C; Slivken, S; Razeghi, M (IOP Publishing, 1997-11-01) Lattice-matched Ga0.51In0.49P/GaAs and strained Ga0.51In0.49P/InxGa1-xAs/GaAs (0.1 less than or equal to x less than or equal to 0.25) modulation-doped field-effect transistor structures were grown by gas source molecular beam epitaxy by using Si as dopant. Detailed electrical characterization results are presented, The Ga0.5In0.49P/In0.25Ga0.75As/GaAs sample yielded dark two-dimensional electron gas densities of 3.75 x 10(12) cm(-2) (300 K) and 2.3 x 10(12) cm(-2) (77 K) which are comparable to the highest...

Citation Formats

O. Nur, M. Willander, R. Turan, M. Sardela, and G. Hansson, “Metal-semiconductor junctions on p-type strained Si1-xGex layers,” APPLIED PHYSICS LETTERS, pp. 1084–1086, 1996, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42690.