Metal-semiconductor junctions on p-type strained Si1-xGex layers

Nur, O
Willander, M
Turan, Raşit
Sardela, MR
Hansson, GV
The electrical properties of Schottky junctions on high-quality p-type strained Si1-xGex layers have been studied for Ge fractions 0 less than or equal to x less than or equal to 0.24. A multicrystal high-resolution x-ray diffractometer was used to investigate the sample's quality and the strain state and to accurately determine the Ge fraction in the fabricated devices. Several different metals, having a wide range of barrier heights, were used to reach conclusions on the variation of barrier height with the Ge content in the grown strained Si1-xGex layers. It has been found that the Schottky barrier height decreases with increasing Ge fraction in the Si1-xGex layer for the different metals investigated. The change in the barrier height with x has been found to be directly correlated to the valence band discontinuity in the Si/Si1-xGex heterojunction. (C) 1996 American Institute of Physics.


Low Schottky barrier junctions on strained p-Si1-xGex for infrared detection
Nur, O; Willander, M; Turan, Raşit; Sardela, MR; Hansson, GV (IOP Publishing, 1997-01-01)
Electrical properties of different low Schottky barrier junctions on high quality strained-Si1-xGex layers with 0 less than or equal to x less than or equal to 0.24 were studied. The investigated metals were Ir, Pt, Pd and Fe. In addition, PtSi/p-Si1-xGex junctions were also produced and characterized; the silicide was deposited by co-sputtering. High-resolution multi-crystal x-ray diffraction (HR-MCXRD) was used to investigate the sample quality and strain state of the MBE grown p-Si1-xGex layers and to ac...
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Lattice-matched Ga0.51In0.49P/GaAs and strained Ga0.51In0.49P/InxGa1-xAs/GaAs (0.1 less than or equal to x less than or equal to 0.25) modulation-doped field-effect transistor structures were grown by gas source molecular beam epitaxy by using Si as dopant. Detailed electrical characterization results are presented, The Ga0.5In0.49P/In0.25Ga0.75As/GaAs sample yielded dark two-dimensional electron gas densities of 3.75 x 10(12) cm(-2) (300 K) and 2.3 x 10(12) cm(-2) (77 K) which are comparable to the highest...
Trapping center parameters in TlInS2 layered crystals by thermally stimulated current measurements
Yuksek, NS; Hasanlı, Nızamı; Ozkan, H; Karci, O (Institute of Physics, Polish Academy of Sciences, 2004-07-01)
Thermally stimulated current measurements are carried out on TlInS2 layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS2 crystal in the low-temperature region.
Citation Formats
O. Nur, M. Willander, R. Turan, M. Sardela, and G. Hansson, “Metal-semiconductor junctions on p-type strained Si1-xGex layers,” APPLIED PHYSICS LETTERS, pp. 1084–1086, 1996, Accessed: 00, 2020. [Online]. Available: