The quantum confined Stark effect in silicon nanocrystals

Date

2008-11-12

Author

Kulakci, Mustafa
SERİNCAN, UĞUR
Turan, Raşit
Finstad, Terje G.

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The quantum confined Stark effect (QCSE) in Si nanocrystals embedded in a SiO(2) matrix is demonstrated by photoluminescence (PL) spectroscopy at room and cryogenic temperatures. It is shown that the PL peak position shifts to higher wavelengths with increasing applied electric field, which is expected from carrier polarization within the quantum dots. It is observed that the effect is more pronounced at lower temperatures due to the improved carrier localization at the lowest energy states of the quantum dots. Experimental results are shown to be in good agreement with phenomenological model developed for the QCSE model.

Subject Keywords

Mechanical Engineering, Electrical and Electronic Engineering, General Materials Science, Mechanics of Materials, Bioengineering, General Chemistry

URI

https://hdl.handle.net/11511/43330

Journal

NANOTECHNOLOGY

DOI

https://doi.org/10.1088/0957-4484/19/45/455403

Collections

Department of Physics, Article

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Citation Formats

M. Kulakci, U. SERİNCAN, R. Turan, and T. G. Finstad, “The quantum confined Stark effect in silicon nanocrystals,” NANOTECHNOLOGY, pp. 0–0, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/43330.