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The quantum confined Stark effect in silicon nanocrystals
Date
2008-11-12
Author
Kulakci, Mustafa
SERİNCAN, UĞUR
Turan, Raşit
Finstad, Terje G.
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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The quantum confined Stark effect (QCSE) in Si nanocrystals embedded in a SiO(2) matrix is demonstrated by photoluminescence (PL) spectroscopy at room and cryogenic temperatures. It is shown that the PL peak position shifts to higher wavelengths with increasing applied electric field, which is expected from carrier polarization within the quantum dots. It is observed that the effect is more pronounced at lower temperatures due to the improved carrier localization at the lowest energy states of the quantum dots. Experimental results are shown to be in good agreement with phenomenological model developed for the QCSE model.
Subject Keywords
Mechanical Engineering
,
Electrical and Electronic Engineering
,
General Materials Science
,
Mechanics of Materials
,
Bioengineering
,
General Chemistry
URI
https://hdl.handle.net/11511/43330
Journal
NANOTECHNOLOGY
DOI
https://doi.org/10.1088/0957-4484/19/45/455403
Collections
Department of Physics, Article
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M. Kulakci, U. SERİNCAN, R. Turan, and T. G. Finstad, “The quantum confined Stark effect in silicon nanocrystals,”
NANOTECHNOLOGY
, pp. 0–0, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/43330.