High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications

Date

2009-05-25

Author

Navarro, A.
Rivera, C.
Pereiro, J.
Munoz, E.
İmer, Muhsine Bilge
DenBaars, S. P.
Speck, J. S.

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The fabrication and characterization of metal-semiconductor-metal polarization-sensitive photodetectors based on A-plane GaN grown on R-plane sapphire substrates is reported. These photodetectors take advantage of the in-plane crystal anisotropy, which results in linear dichroism near the band gap energy. The high resistivity of the A-plane GaN material leads to extremely low dark currents. For an optimized finger spacing of 1 mu m, dark current density and responsivity at 30 V are 0.3 nA/mm(2) and 2 A/W, respectively. A maximum polarization sensitivity ratio of 1.8 was determined. In a differential configuration, the full width at half maximum of the polarization-sensitive region is 8.5 nm.

Subject Keywords

Physics and Astronomy (miscellaneous)

URI

https://hdl.handle.net/11511/46507

Journal

APPLIED PHYSICS LETTERS

DOI

https://doi.org/10.1063/1.3143230

Collections

Department of Metallurgical and Materials Engineering, Article

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Citation Formats

A. Navarro et al., “High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications,” APPLIED PHYSICS LETTERS, pp. 0–0, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46507.