Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy

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2006-04-17

Author

Misra, P
Behn, U
Brandt, O
Grahn, HT
İmer, Muhsine Bilge
Nakamura, S
DenBaars, SP
Speck, JS

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We use photoreflectance (PR) spectroscopy to study the electronic band structure modification of GaN films grown along different nonpolar orientations due to biaxial, anisotropic in-plane strain. The exciton transition energies of an unstrained, high-quality C-plane GaN film are used to accurately determine the crystal-field and spin-orbit splitting energies. For films with a nonpolar orientation, the resonant features observed in the PR spectra exhibit a strong in-plane polarization anisotropy and different transition energies from the ones measured in the C-plane GaN film. The deformation potential D-5 is accurately determined from four GaN films with a nonpolar orientation using the measured energies together with the polarization properties and out-of-plane strain. (c) 2006 American Institute of Physics.

Subject Keywords

Physics and Astronomy (miscellaneous)

URI

https://hdl.handle.net/11511/42445

Journal

APPLIED PHYSICS LETTERS

DOI

https://doi.org/10.1063/1.2198086

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Department of Metallurgical and Materials Engineering, Article

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Citation Formats

P. Misra et al., “Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy,” APPLIED PHYSICS LETTERS, pp. 0–0, 2006, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42445.