Hydrophobicity of chalcopyrite with dithiophosphate and dithiophosphinate in electrochemically controlled condition

Guler, T
Hicyilmaz, C
The degree of hydrophobicity of chalcopyrite was determined by contact angle measurements on polished chalcopyrite surface in electrochemically controlled conditions. Results have shown that the increase in solution pH adversely affect hydrophobicity due to heavy surface oxidation. Maximum contact angles were measured at moderately oxidizing potentials, which proposed that slight oxidation is necessary for a hydrophobic chalcopyrite surface. Sodium diisobutyl dithiophosphinate (DTPI) displayed better results than potassium diethyl dithiophosphate (DTP): even at highly oxidizing potentials, contact angle did almost not change in the presence of DTPI as compared with the collectorless condition and in the presence of DTP.


Voltammetric and drift spectroscopy investigation in dithiophosphinate-chalcopyrite system
Guler, T; Hicyilmaz, C; Gokagac, G; Ekmekci, Z (Elsevier BV, 2004-11-01)
The mechanism of dithiophosphinate (DTPI) adsorption on chalcopyrite was investigated by diffuse reflectance Fourier transformation (DRIFT) spectroscopy and by cyclic voltammetry (CV) at various pHs. CV experiments showed that the redox reactions occurred at a certain degree of irreversibility on the chalcopyrite surface in the absence of a collector due to preferential dissolution of iron ions in slightly acid solution and irreversible surface coverage by iron oxyhydroxides in neutral and alkaline solution...
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The optical properties of TlGaxIn1-xS2 mixed crystals have been studied through transmission and reflection measurements in the wavelength range 400-1100 nm. These measurements allowed determination of the spectral dependence of the refractive index for all compositions of the mixed crystals studied. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The compositional dependences of the refractive index dispersion parameters (oscillator e...
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Electroluminescence ( EL) and photoluminescence ( PL) measurements were conducted on Si-implanted SiO2 layers as a function of process and measurement parameters. Measurable light emission was observed from the metal oxide semiconductor light emitting diode ( MOS-LED) when holes are injected from the substrate. It was shown that major PL and EL emissions have the same origin. However, two important differences were observed between EL and PL spectra. The first one is the light emission from the Si substrate...
Citation Formats
T. Guler and C. Hicyilmaz, “Hydrophobicity of chalcopyrite with dithiophosphate and dithiophosphinate in electrochemically controlled condition,” COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, pp. 11–15, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/65305.