Plasmonic metal-insulator-metal structures for interaction with erbium in amorphous silicon nitride

Date

2009-01-01

Author

Gong, Yiyang
Yerci, Selçuk
Negro, Luca Dal
Vučković, Jelena

Metadata

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We propose to use plasmonic modes in periodically patterned metal-insulator-metal structures to enhance emission from Erbium doped Silicon Nitride. Enhancement of emission up to a factor of 2.3 is experimentally demonstrated.

URI

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84898016077&origin=inward
https://hdl.handle.net/11511/74247

DOI

https://doi.org/10.1364/FIO.2009.FTuB3

Conference Name

OSA Technical Digest (CD) (Optical Society of America) (11–15 October 2009)

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

Y. Gong, S. Yerci, L. D. Negro, and J. Vučković, “Plasmonic metal-insulator-metal structures for interaction with erbium in amorphous silicon nitride,” San Jose, California United States, 2009, vol. XXV, Accessed: 00, 2021. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84898016077&origin=inward.