Solid Phase Epitaxial Thickening of Phosphorus and Boron Doped Polycrystalline Silicon Seed Layer Formed by Aluminium Induced Crystallization Technique

Date

2017-09-06

Author

Tüzün Özmen, Özge
Karaman, Mehmet
Sedani, Salar Habibpur
Turan, Raşit

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https://hdl.handle.net/11511/77137

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Solid phase epitaxial thickening of boron and phosphorus doped polycrystalline silicon thin films formed by aluminium induced crystallization technique on glass substrate Ozmen, O. Tuzun; Karaman, M.; Sedani, S. H.; Sagban, H. M.; Turan, Raşit (Elsevier BV, 2019-11-01) Aluminium induced crystallization (AIC) technique can be used to form the high-quality and large-grained polycrystalline silicon (poly-Si) thin films, which are with the thickness of similar to 200 nm and used as a seed layer, on silicon nitride coated glass substrate. Thanks to aluminium metal in AIC process, the natural doping of AIC thin films is p(+) type (similar to 2 x 10(18) cm(-3)). On the other hand, recombination of carriers can be controlled by partial doping through the defects that may have adv...
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Citation Formats

Ö. Tüzün Özmen, M. Karaman, S. H. Sedani, and R. Turan, “Solid Phase Epitaxial Thickening of Phosphorus and Boron Doped Polycrystalline Silicon Seed Layer Formed by Aluminium Induced Crystallization Technique,” 2017, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/77137.