Crystallization and doping studies of Si thin film solar cells

Tüzün Özmen, Özge
Karaman, Mehmet
Sedani, Salar Habibpur
Şağban, Hüseyin Muzaffer
Turan, Raşit


Crystallization and phase separation mechanism of silicon oxide thin films fabricated via electron beam evaporation of silicon monoxide
Gündüz, Deniz Cihan; Turan, Raşit; Yerci, Selçuk; Department of Micro and Nanotechnology (2015)
Silicon nanocrystals (NCs) imbedded in a matrix of silicon oxide have drawn much attention due to their applications in optoelectronic devices and third-generation solar cells. Several methods were reported for the fabrication of Si NCs. Among these techniques, there are aerosol synthesis, chemical vapor deposition, ion implantation, magnetron sputtering and thermal evaporation. However, electron beam evaporation is a straightforward and effective technique for the fabrication of silicon oxide thin films si...
Crystallization and phase separation mechanism of silicon oxide thin films fabricated via e-beam evaporation of silicon monoxide
Gunduz, Deniz Cihan; Tankut, Aydin; Sedani, Salar; Karaman, Mehmet; Turan, Raşit (2015-04-29)
In this work, silicon oxide thin films were synthesized via e-beam evaporation of silicon monoxide. Subsequent annealing experiments were carried out to induce Si nanocrystals (Si NCs) formation. A broad range of annealing durations and temperatures were studied. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR) were employed to study the mechanism of phase separation in silicon oxide films and crystallization of Si. Raman spectroscopy results show...
Crystallization behavior in a highly driven marginal glass forming alloy
Kalay, Yunus Eren; ANDERSON, I. E. (Elsevier BV, 2008-05-15)
Al90Sm10, a marginal glass former, was rapidly solidified using Cu-block single roller melt spinning at wheel speeds of 30 and 40 m/s. The product phases of rapid solidification were identified and analyzed using high energy synchrotron X-ray diffraction (HEXRD), high resolution transmission electron microscopy, and atom probe tomography. The as-quenched structure consists of a saturated amorphous phase and nanocrystalline Al with typical length scale of about 5 nm. The appearance of a pre-peak on HEXRD dif...
Crystallization of hydrogenated amorphous silicon thin film on glass by using ns-pulsed fiber laser operating at 1064 nm
Salman, H. S.; BACIOĞLU, AKIN; Eken, S. K. (Elsevier BV, 2019-06-01)
A nanosecond pulsed, Ytterbium doped optical fiber laser, operating at 1064 nm, has been used for laser induced crystallization (LIC) of a standard recipe-hydrogenated amorphous silicon (a-Si: H) thin film, deposited in a radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) reactor. Despite relatively lower photon energy of 1.165 eV, the crystallization of the a-Si: H sample with the Tauc gap of 1.70 eV was succeeded. The optical energy density impinging on the sample surface was adjusted by...
Crystallization of amorphous selenium thin films
Özenbas, M.; Kalebozan, H. (Elsevier BV, 1986-12)
The crystallization of amorphous Se (a-Se) films prepared by vacuum deposition at <10-5 Torr onto glass substrates at 20°C was examined. The amorphous-to-crystalline transition was obtained by annealing of the films between 40–90°C. The crystalline structures resulting from annealing at different temperatures have been identified by SEM (Scanning Electron Microscope). X-ray and TEM (Transmission Electron Microscopy) studies showed that these structures were hexagonal. The thicknesses of the films used were ...
Citation Formats
Ö. Tüzün Özmen, M. Karaman, S. H. Sedani, H. M. Şağban, and R. Turan, “Crystallization and doping studies of Si thin film solar cells,” 2018, Accessed: 00, 2021. [Online]. Available: