Crystallization and phase separation mechanism of silicon oxide thin films fabricated via e-beam evaporation of silicon monoxide

Gunduz, Deniz Cihan
Tankut, Aydin
Sedani, Salar
Karaman, Mehmet
Turan, Raşit
In this work, silicon oxide thin films were synthesized via e-beam evaporation of silicon monoxide. Subsequent annealing experiments were carried out to induce Si nanocrystals (Si NCs) formation. A broad range of annealing durations and temperatures were studied. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR) were employed to study the mechanism of phase separation in silicon oxide films and crystallization of Si. Raman spectroscopy results show that SiO cannot be considered as a composite mixture of Si and SiO2. Results suggest that phase separation and crystallization are two separate processes even at relatively high temperatures. Amorphous Si formation was observed at annealing temperatures as low as 800 degrees C. A minimum annealing temperature of between 800 and 900 degrees C is required to form Si NCs. XPS results show a strong phase separation at annealing temperature of 1100 degrees C. (C) 201 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


Transport studies of carbon-rich a-SiCx : H film through admittance and deep-level transient spectroscopy measurements
Atilgan, I; Ozdemir, O; Akaoglu, B; Sel, K; Katircioglu, B (Informa UK Limited, 2006-07-01)
An intrinsic, carbon- rich a- SiCx: H thin film, prepared by the plasma- enhanced chemical vapour deposition ( PECVD) technique, has been studied mainly by AC admittance and small- pulse deep- level transient spectroscopy ( DLTS) measurements on an Al/ a- SiCx: H/ p- Si metal - insulator - semiconductor ( MIS) structure. The effects of measurement temperature, voltage and small- signal AC modulation frequency on the MIS capacitor are qualitatively and quantitatively described. The kinetics of charge injecti...
Optical Characterization of Amorphous Hydrogenated Carbon (a-C:H) Thin Films Prepared by Single RF Plasma Method
Mansuroğlu, Doğan; GÖKŞEN, KADİR; Bilikmen, Sinan (IOP Publishing, 2015-06-01)
Methane (CH4) plasma was used to produce amorphous hydrogenated carbon (a-C:H) films by a single capacitively coupled radio frequency (RF) powered plasma system. The system consists of two parallel electrodes: the upper electrode is connected to 13.56 MHz RF power and the lower one is connected to the ground. Thin films were deposited on glass slides with different sizes and on silicon wafers. The influence of the plasma species on film characteristics was studied by changing the plasma parameters. The chan...
Transport and luminescence phenomena in electroformed silicon nitride-based light emitting diode
ANUTGAN, MUSTAFA; ANUTGAN, TAMİLA; ATILGAN, İSMAİL; Katircioglu, B. (Informa UK Limited, 2013-08-01)
Hydrogenated amorphous silicon nitride-based heterojunction pin diode was electroformed under sufficiently high forward bias stress leading to its instant nanocrystallization at room temperature. In order to investigate the origin of the accompanying bright visible light emission, current-voltage and electroluminescence (EL) characteristics of the electroformed diode were scanned over temperature. Electrical transport mechanism was analysed in the low, medium and high electric field regimes. Temperature and...
Heterojunction solar cells with integrated Si and ZnO nanowires and a chalcopyrite thin film
KARAAĞAÇ, Hakan; Parlak, Mehmet; YENGEL, Emre; Islam, M. Saif (Elsevier BV, 2013-06-15)
ZnO nanowires (NWs) have been successfully synthesized using a hydrothermal technique on both glass and silicon substrates initially coated with a sputtered ZnO thin film layer. Varying ZnO seed layer thicknesses were deposited to determine the effect of seed layer thickness on the quality of ZnO NW growth. The effect of growth time on the formation of ZnO NWs was also studied. Experimental results show that these two parameters have an important effect on formation, homogeneity and vertical orientation of ...
Microstructural properties and local atomic structures of cobalt oxide nanoparticles synthesised by mechanical ball-milling process
AKSOY, FUNDA; AKGÜL, GÜVENÇ; Kurban, Mustafa (Informa UK Limited, 2016-01-01)
In this study, facile preparation of pure and nano-sized cobalt oxides particles was achieved using low-cost mechanical ball-milling synthesis route. Microstructural and morphological properties of synthesised products were characterised by X-ray diffraction (XRD) and transmission electron microscopy (TEM) techniques. XRD results indicated that the fabricated samples composed of cubic pure phase CoO and Co3O4 nanocrystalline particles with an average crystallite size of 37.2 and 31.8nm, respectively. TEM im...
Citation Formats
D. C. Gunduz, A. Tankut, S. Sedani, M. Karaman, and R. Turan, “Crystallization and phase separation mechanism of silicon oxide thin films fabricated via e-beam evaporation of silicon monoxide,” 2015, vol. 12, Accessed: 00, 2020. [Online]. Available: