Crystallization of amorphous selenium thin films

Date

1986-12

Author

Özenbas, M.
Kalebozan, H.

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The crystallization of amorphous Se (a-Se) films prepared by vacuum deposition at <10-5 Torr onto glass substrates at 20°C was examined. The amorphous-to-crystalline transition was obtained by annealing of the films between 40–90°C. The crystalline structures resulting from annealing at different temperatures have been identified by SEM (Scanning Electron Microscope). X-ray and TEM (Transmission Electron Microscopy) studies showed that these structures were hexagonal. The thicknesses of the films used were 2250, 6600 and 11800 Å. By heating the film, crystallization started at the substrate-film interface and proceeded towards the surface. The radius, r, of the crystallites increased linearly with heating time. Assuming an Arrhenius type of relationship, the activation energies for crystallization were calculated. They showed that the thicker the film, the higher is the activation energy.

URI

https://hdl.handle.net/11511/52246

Journal

Journal of Crystal Growth

DOI

https://doi.org/10.1016/0022-0248(86)90155-7

Collections

Department of Metallurgical and Materials Engineering, Article

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Citation Formats

M. Özenbas and H. Kalebozan, “Crystallization of amorphous selenium thin films,” Journal of Crystal Growth, pp. 523–527, 1986, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/52246.