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Phase mixing in GaSb nanocrystals synthesized by nonequilibrium plasma aerotaxy
Date
2020-05-01
Author
Üner, Necip Berker
Thimsen, Elijah
Metadata
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III-V semiconductor nanocrystals are an important class of optoelectronic materials. However, the gas-phase synthesis of these materials, especially of the stibnides, has been left relatively unexplored. In this study, we demonstrate the synthesis of free-standing GaSb nanocrystals for the first time, using a novel gas-phase process. We show that when elemental aerosols are used as precursors for Ga and Sb, the elements mix at the nanometer length scale as the aerosols pass through a nonequilibrium plasma reactor. At sufficiently high plasma power, the mixing produces free-standing GaSb nanocrystals, with a small amount of excess Ga segregated at the periphery of the particles. The reaction is initiated by vaporization of elemental aerosols in the plasma despite the low-background temperature. Ion bombardment determines the extent of vaporization of Ga and Sb and thereby controls the ensemble stoichiometry and reaction rates.
Subject Keywords
aerotaxy
,
continuous reactor
,
gallium antimonide
,
nonthermal plasma
,
semiconductor nanocrystals
,
GALLIUM ANTIMONIDE NANOPARTICLES
,
HETEROEPITAXIAL GROWTH
,
TEMPERATURE
,
PRESSURE
URI
https://hdl.handle.net/11511/97236
Journal
PLASMA PROCESSES AND POLYMERS
DOI
https://doi.org/10.1002/ppap.201900233
Collections
Department of Chemical Engineering, Article
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N. B. Üner and E. Thimsen, “Phase mixing in GaSb nanocrystals synthesized by nonequilibrium plasma aerotaxy,”
PLASMA PROCESSES AND POLYMERS
, vol. 17, no. 5, pp. 0–0, 2020, Accessed: 00, 2022. [Online]. Available: https://hdl.handle.net/11511/97236.