Phase mixing in GaSb nanocrystals synthesized by nonequilibrium plasma aerotaxy

Date

2020-05-01

Author

Üner, Necip Berker
Thimsen, Elijah

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

87
views

0
downloads

III-V semiconductor nanocrystals are an important class of optoelectronic materials. However, the gas-phase synthesis of these materials, especially of the stibnides, has been left relatively unexplored. In this study, we demonstrate the synthesis of free-standing GaSb nanocrystals for the first time, using a novel gas-phase process. We show that when elemental aerosols are used as precursors for Ga and Sb, the elements mix at the nanometer length scale as the aerosols pass through a nonequilibrium plasma reactor. At sufficiently high plasma power, the mixing produces free-standing GaSb nanocrystals, with a small amount of excess Ga segregated at the periphery of the particles. The reaction is initiated by vaporization of elemental aerosols in the plasma despite the low-background temperature. Ion bombardment determines the extent of vaporization of Ga and Sb and thereby controls the ensemble stoichiometry and reaction rates.

Subject Keywords

aerotaxy, continuous reactor, gallium antimonide, nonthermal plasma, semiconductor nanocrystals, GALLIUM ANTIMONIDE NANOPARTICLES, HETEROEPITAXIAL GROWTH, TEMPERATURE, PRESSURE

URI

https://hdl.handle.net/11511/97236

Journal

PLASMA PROCESSES AND POLYMERS

DOI

https://doi.org/10.1002/ppap.201900233

Collections

Department of Chemical Engineering, Article

Suggestions

OpenMETU
Core

Thermal effects of gate connected field-plates and surface passivation on AlGaN/GaN HEMTs Kara, Doğacan; Okutucu Özyurt, Hanife Tuba; Dönmezer, Nazlı; Department of Mechanical Engineering (2018) AlGaN/GaN high electron mobility transistors (HEMTs) are widely preferred in automotive, space, and military applications due to their superior electrical and thermal properties. However, when operated in full capacity, their electrical reliability drops significantly due to electron collapse, device degradation, concentrated heating, and mechanical stresses. To increase the reliability and maximum performance of GaN HEMTs, field-plate and surface passivation technologies are used frequently. Although signi...
Nonequilibrium plasma aerotaxy of size controlled GaN nanocrystals Üner, Necip Berker; Thimsen, Elijah (2020-02-01) High quality gallium nitride (GaN) nanocrystals (NCs) are promising materials in a wide range of applications including optoelectronics, photonics and biomedical devices. Unlike II-VI semiconductors, the synthesis of free-standing GaN NCs is not well-established, and there is a need for a synthesis platform that can provide GaN NCs with tunable size and photonic properties. In this work, we present a flexible gas-phase synthesis method that can deliver crystalline, free-standing, pure GaN NCs with controlle...
Nonlinear compressible finite viscoleasticity of epoxy-based polymers Dal, Hüsnü; Gromala, P. J.; Han, B. (2019-01-01) Epoxy-based polymers are widely used in the semiconductor industry as thermal and/or electrical interfaces and as encapsulating material. In the automotive industry, epoxy-based molding compounds (EMCs) are often used to protect not only the single IC packages but also the entire electronic control units (ECUs) (or the power modules). The stress caused by the mismatch of the coefficient of thermal expansion (CTE) between EMC and adjacent materials is one of the major causes for premature failure. In the tem...
Electronic properties of transition metal oxides Mete, Ersen; Ellialtıoğlu, Süleyman Şinasi; Department of Physics (2003) Transition metal oxides constitute a large class of materials with variety of very interesting properties and important technological utility. A subset with perovskite structure has been the subject matter of the current theoretical investigation with an emphasis on their electronic and structural behavior. An analytical and a computational method are used to calculate physical entities like lattice parameters, bulk moduli, band structures, density of electronic states and charge density distributions for v...
Nanocrystal silicon based visible light emitting pin diodes Anutgan, Mustafa; Katırcıoğlu, Bayram; Department of Physics (2010) The production of low cost, large area display systems requires a light emitting material compatible with the standard silicon (Si) based complementary metal oxide semiconductor (CMOS) technology. The crystalline bulk Si is an indirect band semiconductor with very poor optical properties. On the other hand, hydrogenated amorphous Si (a-Si:H) based wide gap alloys exhibit strong visible photoluminescence (PL) at room temperature, owing to the release of the momentum conservation law. Still, the electrolumine...

Citation Formats

N. B. Üner and E. Thimsen, “Phase mixing in GaSb nanocrystals synthesized by nonequilibrium plasma aerotaxy,” PLASMA PROCESSES AND POLYMERS, vol. 17, no. 5, pp. 0–0, 2020, Accessed: 00, 2022. [Online]. Available: https://hdl.handle.net/11511/97236.