Phase mixing in GaSb nanocrystals synthesized by nonequilibrium plasma aerotaxy

Üner, Necip Berker
Thimsen, Elijah
III-V semiconductor nanocrystals are an important class of optoelectronic materials. However, the gas-phase synthesis of these materials, especially of the stibnides, has been left relatively unexplored. In this study, we demonstrate the synthesis of free-standing GaSb nanocrystals for the first time, using a novel gas-phase process. We show that when elemental aerosols are used as precursors for Ga and Sb, the elements mix at the nanometer length scale as the aerosols pass through a nonequilibrium plasma reactor. At sufficiently high plasma power, the mixing produces free-standing GaSb nanocrystals, with a small amount of excess Ga segregated at the periphery of the particles. The reaction is initiated by vaporization of elemental aerosols in the plasma despite the low-background temperature. Ion bombardment determines the extent of vaporization of Ga and Sb and thereby controls the ensemble stoichiometry and reaction rates.


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Citation Formats
N. B. Üner and E. Thimsen, “Phase mixing in GaSb nanocrystals synthesized by nonequilibrium plasma aerotaxy,” PLASMA PROCESSES AND POLYMERS, vol. 17, no. 5, pp. 0–0, 2020, Accessed: 00, 2022. [Online]. Available: