THE EFFECT OF HIGH THERMAL BUDGET ON CRYSTALLINE SILICON SOLAR CELL BULK QUALITY

Date

2023-7-20

Author

Seyrek, Selin

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Degradation of the Si wafers due to the thermal processes for solar cell fabrication is one of the most significant problems that restrain reaching high conversion efficiency values. During Cz growth, different kinds of impurities enter the Si ingot and many types of defects are created. During the processes that are required for the fabrication of the solar cell, the defects change form depending on the applied thermal budget, which later act as recombination centers for photo-generated charge carriers. In this thesis, the effects of the heat treatment on the bulk lifetime of n-type Cz-Si wafers were investigated in a temperature range of 450°C to 1050°C. It has been observed that, carrier lifetime is highly sensitive to temperature intervals in which different impurity types can take a role in the carrier lifetime. The degradation above 950oC attributed to the formation of the oxygen precipitates was confirmed with the decrease in the concentration of oxygen interstitial measured by the FTIR spectroscopy method.

Subject Keywords

czochralski silicon, bulk quality, thermal budget, thermal donor, oxygen precipitation

URI

https://hdl.handle.net/11511/104902

Collections

Graduate School of Natural and Applied Sciences, Thesis