Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
InP/InAs quantum well infrared photodetectors
Download
MSc_Thesis_OğuzOnurGüngör.pdf
Date
2023-9-08
Author
Güngör, Oğuz Onur
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
111
views
34
downloads
Cite This
Quantum well infrared photodetectors (QWIPs) are advantageous regarding detector uniformity, stability, and cost compared to other infrared detector technologies. On the other hand, they suffer from low quantum efficiency (QE) because they cannot detect normal-incidence radiation. Diffraction-gratings and special mesa structures are used to increase QE by manipulating the incoming radiation. These solutions complicate the detector production process and increase the crosstalk between pixels. Also, they lose their effectiveness when the pixel size is reduced to have a higher resolution and lower cost. Recent studies on new material systems to increase QE give promising results even without diffraction-gratings and special mesa structures. This thesis presents grating-free mid-wavelength QWIPs with high conversion efficiency (CE) based on the InP/InAs material system on InP substrate. Molecular beam epitaxy grown epilayer of the detectors consisted of InP barriers and Si-doped InAs quantum wells. A diffraction-grating-free focal plane array (FPA) with 15 μm pitch and 640x512 format and individual pixel arrays were fabricated and characterized. The cut-off and peak responsivity wavelengths of the pixels were 6.2 and 5.5 μm, respectively. Responsivity measurements exhibited a peak responsivity as high as 2.7 A/W under -4.0 V bias voltage, corresponding to a peak CE of 61%. The mean noise equivalent temperature difference (NETD) of the FPA was approximately 28 mK with f/1.67 optics at 10 ms integration time, which is consistent with the calculated NETD based on the measurements on pixel arrays. These results show that QWIPs based on properly chosen alternative material systems are indispensable alternatives to HgCdTe and Type-II superlattice detectors.
Subject Keywords
Quantum well infrared photodetector
,
Mid wave infrared
,
Infrared detector
URI
https://hdl.handle.net/11511/105565
Collections
Graduate School of Natural and Applied Sciences, Thesis
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
O. O. Güngör, “InP/InAs quantum well infrared photodetectors,” M.S. - Master of Science, Middle East Technical University, 2023.