Structural, electrical and optical characterization of ge-implanted gase single crystal grown by Bridgman Method

Download

index.pdf

Date

2005

Author

Karaağaç, Hazbullah

Metadata

Show full item record

Item Usage Stats

202
views

93
downloads

In this work, structural, electrical and optical characterization of as-grown, Ge-implanted, and annealed GaSe single crystals grown by using 3-zone vertical Bridgman-Stockbarger system, have been studied by carrying out X-ray Diffraction (XRD), electrical conductivity, Hall effect, photoconductivity, and spectral transmission measurements. The temperature dependent electrical conductivity of these samples have been measured between 100 and 400 K. As a result, it was observed that upon implanting GaSe with germanium following annealing process, the resistivity is reduced from 2.1x109 to 6.5x105 ?-cm. Also it was found that Ge-implantation followed by annealing at 500 oC increases the conductivity in exponential fashion. From the temperature dependent conductivities, the activation energies have been found to be 4, 34 and 314 meV for as-grown, 36 and 472 meV for as-implanted, and 39 and 647 meV for implanted and annealed at 500 oC GaSe single crystals. Using XRD measurements it was observed that there is an increase in peak intensities at specific annealing temperatures (300 and 500 C) and a decrease in higher annealing temperatures (700 C). Temperature dependent carrier concentration and Hall mobility measurement were performed in the temperature range of 230 - 410 and 100 - 400 K for as-grown and Ge-implanted and annealed GaSe samples, respectively. All of the samples in this study were found to be p-type with the help Hall measurements. In addition, the density of donor and acceptor atoms are found for each sample and results are compared with each other. In addition, using photoconductivity measurement the relation between photocurrent and illumination intensity and the character of photoconduction were determined. As a result it was found that while at specific temperature intervals impurity scatterings are dominant, in other intervals phonon scatterings start to

Subject Keywords

Physics.

URI

http://etd.lib.metu.edu.tr/upload/3/12606522/index.pdf
https://hdl.handle.net/11511/15420

Collections

Graduate School of Natural and Applied Sciences, Thesis

Suggestions

OpenMETU
Core

Design and production of antireflection coating for Ge, ZnSe and ZnS in 8-12 micrometer wavelength region Üçer, Begüm; Parlak, Mehmet; Department of Physics (2009) This thesis describes the works done during the design and deposition process of the antireflection coating for the materials commonly used as refractive optical elements in thermal imaging systems. These coatings are quite necessary to reduce reflection losses from the surface of the optics and stray light that directly affects the image quality. Germanium, zinc sulfide and zinc selenide were used as substrate material and their optical properties were investigated with infrared ellipsometry and FTIR. Anti...
Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique KARAAĞAÇ, HAKAN; Parlak, Mehmet; KARABULUT, ORHAN; SERİNCAN, UĞUR; Turan, Raşit; Akinoglu, B. G. (Wiley, 2006-12-01) Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X-Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1x10(9) to 6.5x10(5) ohm-em. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for a...
Structural and electronic properties of dipropyl sulfide: A theoretical investigation Calisir, Emine Deniz; Erkoç, Şakir (World Scientific Pub Co Pte Lt, 2006-08-01) The structural, vibrational, electronic and QSAR properties of the dipropyl sulfide (DPS) molecule in gas phase have been investigated theoretically by performing semi-empirical molecular orbital (AM1 and PM3), ab initio (RHF) and density functional theory calculations. The geometry of the molecule has been optimized, infrared spectrum (vibrational modes and intensities) and the electronic properties of the molecule have been calculated in its ground state. It has been found that DPS molecule kinetically ma...
Structural and electronic properties of single-wall ZnO nanotubes Erkoç, Şakir; Kokten, H (Elsevier BV, 2005-07-01) The structural and electronic properties of armchair and zigzag models of single-wall ZnO nanotubes have been investigated by performing semiempirical molecular orbital self-consistent field calculations at the level of AM1 method within the RHF formulation. It has been found that these structures are stable and endothermic. The armchair model has zero net dipole moment, whereas the zigzag model has nonzero net dipole moment. The interfrontier molecular energy gap of these systems are different; the gap of ...
Structural and electronic properties of (CnLi)(+) cluster ions Yazgan, E; Erkoc, A (World Scientific Pub Co Pte Lt, 2005-02-01) The structural and electronic properties of (CnLi)(+) cluster ions with n = 1-6 and n = 20 have been investigated by performing density functional theory calculations at B3LYP level. The vibrational frequencies of the clusters are also calculated.

Citation Formats

H. Karaağaç, “Structural, electrical and optical characterization of ge-implanted gase single crystal grown by Bridgman Method,” M.S. - Master of Science, Middle East Technical University, 2005.