Deposition of Boron Carbide by plasma enhanced chemical vapor deposition technique

Download
093385.pdf
2000
Eroğlu, Özgür Doğa
Show full item record
87
views
0
downloads
https://hdl.handle.net/11511/2630
Graduate School of Natural and Applied Sciences, Thesis

Suggestions

Deposition of AgGaS2 thin films by double source thermal evaporation technique
KARAAĞAÇ, HAKAN; Parlak, Mehmet (Springer Science and Business Media LLC, 2011-09-01)
In this study, polycrystalline AgGaS2 thin films were deposited by the sequential evaporation of AgGaS2 and Ag sources with thermal evaporation technique. Thermal treatment in nitrogen atmosphere for 5 min up to 700 A degrees C was applied to the deposited thin films and that resulted in the mono phase AgGaS2 thin films without the participation of any other minor phase. Structural and compositional analyses showed the structure of the films completely changes with annealing process. The measurements of tra...
Deposition of carbon by intense fast electron beam generator
Goktas, H; Oke, G; Udrea, M; Esendemir, A (2002-01-01)
The electron beam generator consists of a fast filamentary discharge in superposition with an ordinary glow discharge in low-pressure gases. The filling gas is helium, argon or nitrogen at approximately 0.1 Torr pressure. The duration of the electron beam is shorter than 30 ns and the peak current intensity is typically 20 A. The deposition of carbon on a substrate has been done by two methods; firstly, the low pressure argon gas was replaced by methane gas as a plasma source and, secondly, a graphite targe...
Deposition of CZTSe thin films and illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure
Bayrakli, O.; Terlemezoğlu, Makbule; GULLU, H. H.; Parlak, Mehmet (2017-06-30)
Characterization of Cu2ZnSnSe4 (CZTSe) thin films deposited by thermal evaporation sequentially from the pure elemental sources and in-situ post annealing was carried out at 400 C under Se evaporation atmosphere. Another annealing process was applied in nitrogen atmosphere at 450 degrees C to get poly-crystalline monophase CZTSe film structure. XRD analysis together with Raman spectroscopy was used to determine the structural properties. Spectral optical absorption coefficient evaluated from transmission da...
Deposition of CZTSe thin films and investigation of their devices properties
Bayraklı, Özge; Terlemezoğlu, Makbule; Güllü, Hasan Hüseyin; Yıldız, Dilber Esra; Sürücü, Gökhan; Parlak, Mehmet (2017-10-15)
Deposition and Characterization of ZnSnSe2 Thin-Films Deposited by Using Sintered Stoichiometric Powder
Bayrakli Surucu, Ozge; Güllü, Hasan Hüseyin (2019-09-01)
In this work, ZnSnSe2 (ZTSe) thin films were deposited using crystalline powder grown by vertical Bridgman-Stockbarger technique. The deposition process was carried out by means of e-beam evaporation on the well-cleaned soda lime glass substrates and keeping them at the substrate temperature of 200 degrees C. The structural, optical and electrical properties of ternary ZTSe thin films were investigated depending on the annealing temperature at 250 and 300 degrees C. X-ray diffraction analysis showed that as...
Citation Formats
Ö. D. Eroğlu, “Deposition of Boron Carbide by plasma enhanced chemical vapor deposition technique,” Middle East Technical University, 2000.
METU IIS - Integrated Information Service open@metu.edu.tr