Deposition of CZTSe thin films and illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure

Date

2017-06-30

Author

Bayrakli, O.
Terlemezoğlu, Makbule
GULLU, H. H.
Parlak, Mehmet

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

225
views

0
downloads

Characterization of Cu2ZnSnSe4 (CZTSe) thin films deposited by thermal evaporation sequentially from the pure elemental sources and in-situ post annealing was carried out at 400 C under Se evaporation atmosphere. Another annealing process was applied in nitrogen atmosphere at 450 degrees C to get poly-crystalline monophase CZTSe film structure. XRD analysis together with Raman spectroscopy was used to determine the structural properties. Spectral optical absorption coefficient evaluated from transmission data showed the band gap value of 1.49 eV for annealed film. Electrical measurements indicated that CZTSe thin films have p-type semiconductor behavior with the carrier density and mobility values of 10(-19) cm(-3) and 0.70 cm(2)/(V.s). Illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure were investigated by analyzing current-voltage(I-V) and frequency dependent capacitance-voltage(C-V) data. Under the illumination, Ag/n-Si/p-CZTSe/In heterostructure showed photodiode behavior having V-oc value of 100 mV and I-sc value of 27.5 mu A. With the illumination, series resistances (R-s), diode ideality factor (n) and barrier height (Phi(b)) decreased and shunt resistance (R-sh) increased. Capacitance value at lower frequency decreased due to the illumination effect.

Subject Keywords

Thin film, Thermal evaporation, Kesterite, Heterostructure, Transmission

URI

https://hdl.handle.net/11511/40286

Journal

JOURNAL OF ALLOYS AND COMPOUNDS

DOI

https://doi.org/10.1016/j.jallcom.2017.03.163

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Structural characteristics of thermally evaporated Cu0.5Ag0.5InSe2 thin films Gullu, H. H.; Parlak, Mehmet (2016-05-01) In this work, Cu0.5Ag0.5InSe2 (CAIS) thin film samples were prepared by thermal evaporation of Cu, Ag, InSe and Se evaporants sequentially on glass substrates. Following the deposition, annealing processes were applied at different temperatures. The as-grown and annealed CAIS samples were nearly stoichiometric in the detection limit of the compositional measurement. The x-ray diffraction (XRD) measurements revealed that they were in polycrystalline structure with a preferred orientation along the (112) dire...
Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode Coskun, EMRE; Gullu, H. H.; CANDAN, İDRİS; Bayrakli, O.; Parlak, Mehmet; Ercelebi, C. (2015-06-01) In this work, p-(Ag-Ga-In-Te) polycrystalline thin films were deposited on soda-lime glass and n-type Si substrates by e-beam evaporation of AgGa0.5In0.5Te2 crystalline powder and the thermal evaporation of Ag powder, sequentially in the same chamber. The carrier concentration and mobility of the Ag-Ga-In-Te (AGIT) film were determined as 5.82 x 10(15) cm(-3) and 13.81 cm(2)/(V s) as a result of Hall Effect measurement. The optical analysis indicated that the band gap values of the samples were around 1.58 ...
Fabrication of CdSexTe1-x thin films by sequential growth using double sources Demir, Medine; Terlemezoglu, M.; Parlak, Mehmet (2021-10-15) CdSexTe(1-x) (CST) ternary thin films were fabricated by stacking thermally evaporated CdSe and electron beam evaporated CdTe layers. The final structure was achieved in a stoichiometric form of approximately Cd:Se:Te = 50:25:25. The post-annealing processes at 300, 400, and 450 °C were applied to trigger the compound formation of CST thin films. The X-ray diffraction (XRD) profiles revealed that CdTe and CdSe have major peaks at 23.9° and 25.5° corresponds to (111) direction in cubic zinc-blend structure. ...
Thickness effects in hydrogen sorption of Mg/Pd thin films Gharavi, Ayshe G.; Akyildiz, Hasan; Öztürk, Tayfur (2013-12-15) Mg thin films with various thicknesses ranging from 50 to 1000 nm capped with Pd have been prepared by thermal evaporation and their hydrogen sorption properties were examined following the electrical resistance change. The study showed that the hydrogenation and dehydrogenation temperatures correlate with the film thickness, thinner films reacting with hydrogen at reduced temperatures. It is concluded that films thinner than 200 nm react fully with hydrogen, while a considerable portion of the thicker film...
Hydrogen absorption in magnesium based crystalline thin films Akyildiz, Hasan; Ozenbas, Macit; Öztürk, Tayfur (2006-08-01) A study is carried out for hydrogenation of Mg based thin films produced via thermal evaporation. Films produced were pure Mg, Mg capped with Au-Pd, Mg-Cu co-deposited and Mg-Cu multilayered. The films under the experimental conditions employed were crystalline with columnar grains with some degree of preferred orientation. In multi-component systems, the films in the as-deposited state were made of individual elements, but upon hydrogenation at temperatures greater than 473K, the elements react with each o...

Citation Formats

O. Bayrakli, M. Terlemezoğlu, H. H. GULLU, and M. Parlak, “Deposition of CZTSe thin films and illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 337–343, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40286.