Deposition of AgGaS2 thin films by double source thermal evaporation technique

Parlak, Mehmet
In this study, polycrystalline AgGaS2 thin films were deposited by the sequential evaporation of AgGaS2 and Ag sources with thermal evaporation technique. Thermal treatment in nitrogen atmosphere for 5 min up to 700 A degrees C was applied to the deposited thin films and that resulted in the mono phase AgGaS2 thin films without the participation of any other minor phase. Structural and compositional analyses showed the structure of the films completely changes with annealing process. The measurements of transmittance and reflectance allowed us to calculate the band gap of films lying in 2.65 and 2.79 eV depending on annealing temperature. The changes in the structure with annealing process also modify the electrical properties of the films. The resistivity of the samples varied in between 2 x 10(3) and 9 x 10(6) (Omega-cm). The room temperature mobility depending on the increasing annealing temperature was in the range of 6.7-37 (cm(2) V-1 s(-1)) with the changes in carrier concentrations lying in 5.7 x 10(13)-2.5 x 10(10) cm(-3). Mobility-temperature dependence was also analyzed to determine the scattering mechanisms in the studied temperature range with annealing. The variations in the electrical parameters of the films were discussed in terms of their structural changes.


Current transport mechanisms in low resistive CdS thin films
Günal, İbrahim; Parlak, Mehmet (Springer Science and Business Media LLC, 1997-02-01)
The current transport mechanisms in polycrystalline CdS thin films have been studied as a function of temperature over the temperature range 20-230 K. Conductivity data for the high temperature region has been analysed using Seto's model of thermionic emission. At intermediate temperatures it was found that thermionic emission and tunnelling of carriers through the potential barrier both contribute to the conductivity. Below 100 K Mott's hopping process appears to be the predominant conduction mechanism.
Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoğlu, Makbule; Yildiz, D. E.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-08-01)
In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide (ZnO) thin film-based diode. The sandwich structure in the form of Ag/ZnO/Si/Al is investigated at temperatures between 220 and 360 K and in the frequency region of 1 kHz-1 MHz. ZnO thin film layer is deposited on a p-Si wafer substrate as a transparent conductive oxide layer by taking in...
Calculation of the Raman frequency shifts for the alpha phase of solid oxygen
Yurtseven, Hasan Hamit (Elsevier BV, 2017-01-01)
We calculate in this study the Raman frequencies of the two librons and one vibron at various pressures at constant temperatures of 10 K and also at the temperatures of 6 and 18 K by using the volume data from the literature through the mode Gruneisen parameter for the a phase of oxygen.
Characterization of c-axis oriented Y-Ba-Cu-O thin films prepared by PVD on LaAlO3 (100) and SrTiO3 (100) substrates
Ozenbas, MA; Gungoren, T (Elsevier BV, 2000-11-01)
In this study, high T-c superconducting thin films of Y-Ba-Cu-O system have been prepared onto single crystals of LaAlO3 (100) and SrTiO3 (100) by resistive evaporation of YF3, BaF2 and Cu powders and a subsequent multi-stage annealing. In the deposition process, two different methods were used: mixed-powder method and sequential-deposition method. The best quality films were achieved on LaAlO3 substrates by using sequential-deposition technique with offset critical transition temperature of 88.1 K. Charact...
Temperature dependence of electrical properties in Cu0.5Ag0.5InSe2/Si heterostructure
Gullu, H. H.; Parlak, Mehmet (Springer Science and Business Media LLC, 2018-07-01)
The polycrystalline Cu0.5Ag0.5InSe2 thin film was deposited on mono-crystalline n-Si wafer by sequential thermal evaporation of elemental sources. p-Cu0.5Ag0.5InSe2/n-Si heterojunction diode was fabricated and the current-voltage characteristics of the diode at various temperatures were investigated to determine the main diode parameters and dark current transport mechanism. The studied diode structure showed a rectifying behavior with a barrier height of 0.63 eV at room temperature. Series and shunt resist...
Citation Formats
H. KARAAĞAÇ and M. Parlak, “Deposition of AgGaS2 thin films by double source thermal evaporation technique,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 1426–1432, 2011, Accessed: 00, 2020. [Online]. Available: