High performance near/short wavelength infrared megapixel InGaAs focal plane array fabrication development and new design proposals

Download

index.pdf

Date

2018

Author

Karaca, Utku

Metadata

Show full item record

Item Usage Stats

319
views

230
downloads

In0.53Ga0.47As is the most appropriate material system for Short Wavelength Infrared (SWIR) detection at ~1.7 μm cutoff wavelength with its relatively lower cost and high performance. Ultra-low dark current (~ nA/cm2) has been recently demonstrated in InGaAs photodetectors with planar type process by eliminating surface leakage current. Here, a fabrication procedure for planar InGaAs photodetectors with unique pixel isolation methods has been developed and ~10 nA/cm2 dark current density levels were obtained from 15 and 25 μm pitch megapixel and large format Focal Plane Arrays (FPA) where almost 100% internal quantum efficiency was measured. Mesa type InGaAs photodetectors were also fabricated to be able to make a comparison between two process types. Developed photodetectors were able to sense both Near Infrared (NIR) and visible region of electromagnetic spectrum by removing InP substrate and ~99.5% pixel operability was achieved in FPAs after flip-chip bonding and substrate removal. Furthermore, a novel all InGaAs nBn photodetector design was also proposed numerically in order to reduce surface leakage current particularly in mesa type photodetectors. Simulations were executed in Sentaurus TCAD numerical tool where InGaAs material properties were optimized with the data provided in literature, and also with the experimental results obtained in InGaAs photodetector fabrication. Shockley-Read-Hall (SRH), Auger, radiative and surface currents were modeled and more than 20 times improvement in dark current has been shown to be achievable by utilizing nBn photodetector compared to conventional p-n InP/InGaAs photodetectors without degrading responsivity.

Subject Keywords

Optical detectors., Infrared technology.

URI

http://etd.lib.metu.edu.tr/upload/12622282/index.pdf
https://hdl.handle.net/11511/27397

Collections

Graduate School of Natural and Applied Sciences, Thesis

Suggestions

OpenMETU
Core

Development of high performance uncooled infrared detector materials Kebapçı, Başak; Akın, Tayfun; Turan, Raşit; Department of Micro and Nanotechnology (2011) This thesis reports both the optimizations of the vanadium oxide (VOx) thin film as an active infrared detector material by the magnetron sputtering deposition method and its use during fabrication of proper resistors for the microbolometers. Vanadium oxide is a preferred material for microbolometers, as it provides high TCR value, low noise, and reasonable resistance, and a number of high-tech companies have used this material to obtain state-of-the-art microbolometer arrays. This material is first used in...
Development of high fill factor and high performance uncooled infrared detector pixels Küçük, Şeniz Esra; Akın, Tayfun; Department of Electrical and Electronics Engineering (2011) This thesis presents the design, fabrication and characterization of high performance and high fill factor surface micromachined uncooled infrared resistive microbolometer detectors which can be used in large format focal plane arrays (FPAs). The detector pixels, which have a pixel pitch of 25 μm, are designed and fabricated as two-level structures using the enhanced sandwich type resistor while the active material is selected as Yttrium Barium Copper Oxide (YBCO). First level of the pixel structure is allo...
Ultra-fast charge exchange spectroscopy for turbulent ion temperature fluctuation measurements on the DIII-D tokamak (invited) Uzun Kaymak, İlker Ümit; McKee, G. R. (2012-10-01) A novel two-channel, high throughput, high efficiency spectrometer system has been developed to measure impurity ion temperature and toroidal velocity fluctuations associated with long-wavelength turbulence and other plasma instabilities. The spectrometer observes the emission of the n = 8-7 hydrogenic transition of C+5 ions (lambda(air) = 529.06 nm) resulting from charge exchange reactions between deuterium heating beams and intrinsic carbon. Novel features include a large, prism-coupled high-dispersion, v...
Barrier engineering for high-performance nBn infrared photodetectors Uzgur, Fatih; Kocaman, Serdar; Department of Micro and Nanotechnology (2020) Despite intensive studies, for high-performance applications, lowering dark current is still a challenging problem for pn-type infrared (IR) photodetectors. Over the last two decades, barrier-type IR detectors have been proposed as a solution for obtaining high-performance and high operation temperature conditions. However, the valence band discontinuity limits the material alternatives to which the barrier detector architecture can be applied. In this thesis work, it has been numerically shown that some ma...
High performance short wavelength infrared focal plane arrays Çırçır, Kübra; Beşikci, Cengiz; Department of Electrical and Electronics Engineering (2017) Short Wavelength Infrared (SWIR) band is desirable for many applications such as night vision, spectroscopy and hyperspectral imaging. Indium Gallium Arsenide (In0.53Ga0.47As) is a suitable material for SWIR photodetectors. This thesis focuses on the investigation of the pixel characteristics of a 15 µm pitch large format (640x512) focal plane array (FPA) with In0.53Ga0.47As absorber and Al0.52In0.48As p-type cap layers as an alternative to the conventional In0.53Ga0.47As detectors utilizing InP as the p-ca...

Citation Formats

U. Karaca, “High performance near/short wavelength infrared megapixel InGaAs focal plane array fabrication development and new design proposals,” M.S. - Master of Science, Middle East Technical University, 2018.