Show/Hide Menu
Hide/Show Apps
anonymousUser
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Açık Bilim Politikası
Açık Bilim Politikası
Frequently Asked Questions
Frequently Asked Questions
Browse
Browse
By Issue Date
By Issue Date
Authors
Authors
Titles
Titles
Subjects
Subjects
Communities & Collections
Communities & Collections
Mechanisms of light emission from terbium ions (Tb3+) embedded in a Si rich silicon oxide matrix
Date
2012-9
Author
Kaleli, Buket
Kulakci, Mustafa
Turan, Raşit
Metadata
Show full item record
Item Usage Stats
7
views
0
downloads
Mechanisms of light emission in Tb doped Si rich SiOx matrix prepared by magnetron sputtering are studied by photoluminescence spectroscopy (PL). Characteristic PL peaks of Tb3+ ions and Si nanocrystals are simultaneously observed with an inverse relationship between their intensity. With a prolonged heat treatment at high temperatures, light emission from Tb3+ ions enhances at the expense of total quenching of the PL signal from the nanocrystals. It is suggested from the annealing studies as a function of process conditions and structural characterization that the light emission from Tb ions is mediated by trap states formed in the band gap of the oxide matrix by TbxSiyOz complexes or excess Si states.
Subject Keywords
Silicon nanocrystals
,
Tb3+
,
PL
URI
https://hdl.handle.net/11511/28141
Journal
Optical Materials
DOI
https://doi.org/10.1016/j.optmat.2012.05.036
Collections
Department of Physics, Article