Evolution of SiO2 matrix during the formal-ion of Ge and Si nanocrystals by ion implantation

Yerci, Selçuk
Turan, Raşit
Fourier transformed infrared spectroscopy (FTIR) has been employed to observe and understand structural variations in SiO2 matrix during the formation of Ge and Si nanocrystals by ion implantation as a function of processing parameters. The Si-O asymmetric stretching peak of absorption spectra were used to monitor the evolution of SiOx (x < 2) films during the annealing process. It was shown that the recovery process in Si-O network is quite different in Ge and Si implanted samples and the deformation caused by Ge atoms in the SiO2 matrix can be recovered by annealing the implanted samples at lower temperatures than that by Si atoms. This is in agreement with the formation kinetics of the Si and Ge nanocrystals in SiO2 as observed by Raman spectroscopy and photoluminescence measurements of the same samples.


Evolution of Vibrational Modes of SiO2 During the Formation of Ge and Si Nanocrystals by Ion Implantation and Magnetron Sputtering
İMER, ALİ; Yerci, Selçuk; ALAGOZ, A. S.; KULAKCI, M.; SERINCAN, U.; FINSTAD, T. G.; Turan, Raşit (2010-01-01)
Structural variations of SiOx matrix have been studied with Fourier Transform Infrared Spectroscopy (FTIR) during the formation of Si and Ge nanocrystal. Two frequently used methods, magnetron sputtering and ion implantation have been employed to form SiOx matrix containing excess Si and Ge. The Si-O-Si stretching mode has been deconvoluted to monitor the evolution of SiOx films during the annealing process. The integrated area and the shift in the SiOx peak positions are found to be well correlated with th...
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Citation Formats
U. SERİNCAN, S. Yerci, M. KULAKCI, and R. Turan, “Evolution of SiO2 matrix during the formal-ion of Ge and Si nanocrystals by ion implantation,” NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, pp. 419–425, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/31287.