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Characteristics of traps in AgIn5S8 single crystals

2014-10
Özdemir, Salahattin
Bucurgat, Mahmut
Firat, Tezer
Characteristics of charge traps in AgIn5S8 single crystals are investigated by the use of Thermally Stimulated Current (TSC) technique. The TSC spectra of the unintentionally doped sample recorded at a constant heating rate from 80 K to 300 K reveals a single broad peak at similar to 90 K. The shift of the TSC peak continuously due to post-illumination preheating process confirmed the continuous trap distribution, which is Gaussian in shape. The trap density distribution changes from similar to 40 meV on the shallow side to similar to 120 meV on the deep side with the appearance of a maximum at similar to 72 meV.