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Thermally stimulated current study of traps distribution in beta-tlins2 layered crystals
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Date
2008
Author
Işık, Mehmet
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Trapping centres in as-grown TlInS2 layered single crystals have been studied by using a thermally stimulated current (TSC) technique. TSC measurements have been performed in the temperature range of 10-300 K with various heating rates. Experimental evidence has been found for the presence of five trapping centres with activation energies 12, 14, 400, 570 and 650 meV. Their capture cross-sections and concentrations were also determined. It is concluded that in these centres retrapping is negligible as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. An exponential distribution of traps was revealed from the analysis of the TSC data obtained at different light excitation temperatures. The transmission and reflection spectra of TlInS2 crystals were measured over the spectral region of 400-1100 nm to determine the absorption coefficient and refractive index. The analysis of the room temperature absorption data revealed the coexistence of the indirect and direct transitions. The absorption edge was observed to shift toward the lower energy values as temperature increases from 10 to 300 K. The oscillator and the dispersion energies, and the zero-frequency refractive index were also reported. Furthermore, the chemical composition of TlInS2 crystals was determined from energy dispersive spectroscopic analysis. The parameters of monoclinic unit cell were found by studying the x-ray powder diffraction.
Subject Keywords
Physics.
,
Thermally stimulated currents.
URI
http://etd.lib.metu.edu.tr/upload/12609667/index.pdf
https://hdl.handle.net/11511/18190
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Graduate School of Natural and Applied Sciences, Thesis
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Trapping centres and their distributions in as-grown TlGaSeS layered single crystals were studied using thermally stimulated current (TSC) measurements. The investigations were performed in the temperature range of 10–160 K with various heating rates between 0.6–1.2 K/s. Experimental evidence has been found for the presence of three electrons trapping centres with activation energies 12, 20, and 49 meV and one hole trapping centre located at 12 meV. Their capture cross-sections and concentrations were also ...
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The trap levels in nominally undoped Ga3InSe4 crystals were investigated in the temperature range of 10-300 K using the thermally stimulated currents technique. The study of trap levels was accomplished by the measurements of current flowing along the c-axis of the crystal. During the experiments we utilized a constant heating rate of 0.8 K/s. Experimental evidence is found for one hole trapping center in the crystal with activation energy of 62 meV. The analysis of the experimental TSC curve gave reasonabl...
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M. Işık, “Thermally stimulated current study of traps distribution in beta-tlins2 layered crystals,” M.S. - Master of Science, Middle East Technical University, 2008.
