Alpan Bek

E-mail
bek@metu.edu.tr
Department
Department of Physics
Scopus Author ID
Web of Science Researcher ID
Enhanced catalytic performance through precise structural modification of Au-Ag nanoworms using controlled etching process
Khan, Ghazanfar Ali; Bek, Alpan; Masson, Jean-Francois; Ahmed, Waqqar (2025-05-20)
Polycrystalline nanomaterials inherently possess a high concentration of defects, owing to the presence of grain boundaries. These defects, while abundant in smaller nanoparticles (NPs), can become embedded within the bulk...
Vertical Self-Assembly of Gold Nanoworms for Sensitive Surface-Enhanced Raman Spectroscopy-Based Trace Detection
Khan, Ghazanfar Ali; Demir, Ahmet Kemal; Demirtas, Ozge; Tasgin, Dilek Isik; Bek, Alpan; Bhatti, Arshad Saleem; Masson, Jean-Francois; Ahmed, Waqqar (2025-04-03)
The assembly of anisotropic nanoparticles into closely packed structures results in unique functionalities. Herein, we report a 3D multilayer vertical assembly of worm-shaped Au nanoparticles using a carefully regulated ev...
Enhancing InGaN LED performance via ALD-grown Al2O3 sidewall passivation
Bayramlı, Hasan Mert; Genç, Muhammet; Yücel, Oğuzhan; Bulut, B.; Bek, Alpan; Demirtaş, Mustafa (2025-04-01)
InGaN-based light-emitting diodes (LEDs) are at the forefront of solid-state lighting technologies due to their superior efficiency and broad spectral emission. However, their performance is often compromised by leakage cu...
Laser-Induced Damage of UHMW-PE-Based Layered Ballistic Materials
Candan, Can; Kaya Çekin, Emine Yasemen; Akşit Kaya, Elif Türkan; Tiken, Mehmet; Bek, Alpan; Berberoğlu, Halil; ORHAN, ELİF; Yeniay, Aydın (2024-11-19)
The laser-induced damage threshold properties of material structures play a key role in identifying and selecting optimum materials with the respective geometric configurations for laser shielding applications. The laser-i...
Gate leakage reduction in AlGaN/GaN HEMTs using in situ ion treatment
Nawaz, Muhammad Imran; Gurbuz, Abdulkadir; Salkim, Gurur; Zafar, Salahuddin; Akoglu, Busra Cankaya; Bek, Alpan; Ozbay, Ekmel (2024-09-01)
A new in situ treatment method is proposed to reduce the gate leakage in normally-on AlGaN/GaN HEMTs. It consists of O2-Ar ion bombardment before the gate metalization. Ion treatment is found to improve the quality of gate...
Development of a selective wet-chemical etchant for precise 3D sculpting of silicon enabled by infrared non-linear laser modification
Zolfaghari Borra, Mona; Radfar, Behrad; Nasser, Hisham; Çolakoğlu, Tahir; Tokel, Onur; Turnalı, Ahmet; Işık Taşgın, Dilek; Toffoli, Hande; Toffoli, Daniele; İlday, Fatih Ömer; Turan, Raşit; Pavlov, Ihor; Bek, Alpan (2024-09-01)
Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using t...
Voltage-controlled extraordinary optical transmission in the visible regime
Asif, Hira; Bek, Alpan; TAŞGIN, MEHMET EMRE; ŞAHİN, RAMAZAN (2024-03-15)
Control of components in integrated photonic circuits is crucial in achieving programmable devices. Operation bandwidth of a plasmonic device cannot be generally tuned once it is manufactured, especially in the visible reg...
Facile synthesis of Ag-coated Au-Ag nanoworms and their shell specific etching for enhanced catalytic activity
Khan, Ghazanfar Ali; Demirtaş, Özge; Bek, Alpan; Ahmed, Waqqar (2023-11-01)
One-dimensional noble-metal nanoparticles (NPs) and their surface modifications to enhance defect states are critical for heterogeneous catalysis. Herein, we report a remarkable enhancement in the catalytic activity of Au-...
On-demand continuous-variable quantum entanglement source for integrated circuits
Günay, Mehmet; Das, Priyam; Yüce, Emre; Polat, Emre Ozan; Bek, Alpan; Taşgın, Mehmet Emre (2023-01-02)
Integration of devices generating non-classical states (such as entanglement) into photonic circuits is one of the major goals in achieving integrated quantum circuits (IQCs). This is demonstrated successfully in recent de...
Nanosecond Laser-Induced Micro-Modifications in Bulk of Crystal Silicon
Kadan, Viktor; Pavlova, Svitlana; Bek, Alpan; Aydin, Yavuz; Blonskyi, Ivan; Pavlov, Ihor (2023-01-01)
3D modifications of crystalline Si (c-Si) by nano-, pico-, or femtosecond lasers at 1550 nm-wavelength are under intensive studies nowadays due to the wide range of potential applications in photonics and optoelectronics [...
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