Alpan Bek

E-mail

bek@metu.edu.tr

Department

Department of Physics

ORCID

0000-0002-0190-7945

Scopus Author ID

6602813700

Web of Science Researcher ID

A-4847-2010

Disorder-Engineered Hybrid Plasmonic Cavities for Emission Control of Defects in hBN GENÇ, SİNAN; Yücel, Oǧuzhan; Aǧlarcı, Furkan; Rodriguez-Fernandez, Carlos; Yilmaz, Alpay; Caglayan, Humeyra; Ateş, Serkan; Bek, Alpan (2026-02-18) Defect-based quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for scalable quantum photonics due to their stable single-photon emission at room temperature. However, enhancing their emission ...
Enhanced catalytic performance through precise structural modification of Au-Ag nanoworms using controlled etching process Khan, Ghazanfar Ali; Bek, Alpan; Masson, Jean-Francois; Ahmed, Waqqar (2025-05-20) Polycrystalline nanomaterials inherently possess a high concentration of defects, owing to the presence of grain boundaries. These defects, while abundant in smaller nanoparticles (NPs), can become embedded within the bulk...
Vertical Self-Assembly of Gold Nanoworms for Sensitive Surface-Enhanced Raman Spectroscopy-Based Trace Detection Khan, Ghazanfar Ali; Demir, Ahmet Kemal; Demirtas, Ozge; Tasgin, Dilek Isik; Bek, Alpan; Bhatti, Arshad Saleem; Masson, Jean-Francois; Ahmed, Waqqar (2025-04-03) The assembly of anisotropic nanoparticles into closely packed structures results in unique functionalities. Herein, we report a 3D multilayer vertical assembly of worm-shaped Au nanoparticles using a carefully regulated ev...
Enhancing InGaN LED performance via ALD-grown Al2O3 sidewall passivation Bayramlı, Hasan Mert; Genç, Muhammet; Yücel, Oğuzhan; Bulut, B.; Bek, Alpan; Demirtaş, Mustafa (2025-04-01) InGaN-based light-emitting diodes (LEDs) are at the forefront of solid-state lighting technologies due to their superior efficiency and broad spectral emission. However, their performance is often compromised by leakage cu...
Active Tunable Extraordinary Optical Transmission in the Visible Regime Asif, Hira; TAŞGIN, MEHMET EMRE; Bek, Alpan; ŞAHİN, RAMAZAN (2025-01-01) Active tuning of components in the photonic integrated circuits (PICs) is crucial for achieving programmable devices, especially in the visible regime [1]. However, the operational bandwidth and response time of photonic d...
Nanosecond IR Laser-Assisted Selective 3D Etching of Silicon for Photovoltaics Akhtaryarazar, Darya; Kadan, Viktor; Dadashi, Khalil; Demirbas, Kardelen; Bek, Alpan; Borra, Mona Zolfaghari; Arıkan, Bülent; GOODARZİ, ARİAN; Turan, Raşit; Pavlov, Ihor (2025-01-01) Selective etching of laser-modified silicon (Si) enables 3D micro-sculpturing, offering new opportunities for photovoltaic (PV) applications. This technique facilitates high-aspect-ratio microstructures for light trapping ...
Laser-Induced Damage of UHMW-PE-Based Layered Ballistic Materials Candan, Can; Kaya Çekin, Emine Yasemen; Akşit Kaya, Elif Türkan; Tiken, Mehmet; Bek, Alpan; Berberoğlu, Halil; ORHAN, ELİF; Yeniay, Aydın (2024-11-19) The laser-induced damage threshold properties of material structures play a key role in identifying and selecting optimum materials with the respective geometric configurations for laser shielding applications. The laser-i...
Development of a selective wet-chemical etchant for precise 3D sculpting of silicon enabled by infrared non-linear laser modification Zolfaghari Borra, Mona; Radfar, Behrad; Nasser, Hisham; Çolakoğlu, Tahir; Tokel, Onur; Turnalı, Ahmet; Işık Taşgın, Dilek; Toffoli, Hande; Toffoli, Daniele; İlday, Fatih Ömer; Turan, Raşit; Pavlov, Ihor; Bek, Alpan (2024-09-01) Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using t...
Gate leakage reduction in AlGaN/GaN HEMTs using in situ ion treatment Nawaz, Muhammad Imran; Gurbuz, Abdulkadir; Salkim, Gurur; Zafar, Salahuddin; Akoglu, Busra Cankaya; Bek, Alpan; Ozbay, Ekmel (2024-09-01) A new in situ treatment method is proposed to reduce the gate leakage in normally-on AlGaN/GaN HEMTs. It consists of O2-Ar ion bombardment before the gate metalization. Ion treatment is found to improve the quality of gate...
Voltage-controlled extraordinary optical transmission in the visible regime Asif, Hira; Bek, Alpan; TAŞGIN, MEHMET EMRE; ŞAHİN, RAMAZAN (2024-03-15) Control of components in integrated photonic circuits is crucial in achieving programmable devices. Operation bandwidth of a plasmonic device cannot be generally tuned once it is manufactured, especially in the visible reg...

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