Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Formation of Ge nanocrystals in Al2O3 matrix
Date
2008-02-01
Author
Yerci, Selçuk
SERİNCAN, UĞUR
Turan, Raşit
GOLAN, YUVAL
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
142
views
0
downloads
Cite This
Ge nanocrystals were formed in Al2O3 matrix by implantation of Ge ions into sapphire (alpha-Al2O3) substrates and subsequent annealing. Diagnostic techniques, Raman spectroscopy, XRD, TEM, EDS, and SAED were employed to monitor and study formation of Ge nanocrystals and their evolution during heat treatments. TEM and EDS analysis revealed the diffusion of Ge ions into the substrate during annealing process. While Ge nanocrystals with mean sizes of 15 nm were observed in the heavily implanted region small nanocrystals with mean sizes of 4 nm were identified underneath this region. Some grains of transition aluminas were formed in the implanted region which was amorphized during the implantation. Extensive stress between the transition aluminas and sapphire matrices and its effects on the matrix were detected. The effect of stress on the Raman and XRD spectra of Ge nanocrystals was discussed.
Subject Keywords
Alumina
,
Sapphire
,
Ge
,
Nanocrystals
,
Ion implantation
,
Raman
,
XRD
,
TEM
URI
https://hdl.handle.net/11511/30402
Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
DOI
https://doi.org/10.1166/jnn.2008.a018
Collections
Graduate School of Natural and Applied Sciences, Article
Suggestions
OpenMETU
Core
Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence
Yerci, Selçuk; DOĞAN, İLKER; Tokay, S.; GENİSEL, MUSTAFA; AYDINLI, ATİLLA; Turan, Raşit (2006-10-01)
Silicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800 degrees C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy a...
Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy
Serincan, U; Kartopu, G; Guennes, A; Finstad, TG; Turan, Raşit; Ekinci, Y; Bayliss, SC (IOP Publishing, 2004-02-01)
Ge nanocrystals formed in a SiO2 matrix by ion implantation were studied by Raman spectroscopy. It is shown that Raman analysis based on the phonon confinement model yields a successful explanation of the peculiar characteristics resulting from the nanocrystals. A broadening and a shift in the Raman peak are expected to result from the reduced size of the crystals. Asymmetry in the peak is attributed to the variations in the size of the nanocrystals. These effects were observed experimentally for the Ge nan...
Formation of semiconductor nanocrystals in sio2 by ion implantation
Serincan, Uğur; Turan, Raşit; Department of Physics (2004)
In this study, we used ion implantation technique to synthesize semiconductor (Ge, Si) nanocrystals in SiO2 matrix. Ge and Si nanocrystals have been successfully formed by Ge and Si implantation and post annealing. Implanted samples were examined by characterization techniques such as TEM, XPS, EDS, SAD, SIMS, PL, Raman and FTIR spectroscopy and the presence of Ge and Si nanocrystals in the SiO2 matrix has been evidenced by these measurements. It was shown that implantation dose, implantation energy, anneal...
Structural and optical properties of Al2O3 with Si and Ge nanocrystals
Yerci, Selçuk; Yıldız, İlker; Serincan, Ugur; Shandalov, Michael; Golan, Yuval; Turan, Raşit (2007-07-04)
Si and Ge nanocrystals were formed in Al2O3 matrix by ion implantation and subsequent annealing. The phase separation of the Si nanocrystals was observed using X-ray photoelectron spectroscopy by monitoring Si 2p electrons. During nanocrystal formation with a high temperature annealing Si4+ signals corresponding to Si nanoclusters increase while Si 4+ signals related to a-SiO2 disappear from the spectrum. The transition from amorphous to nanocrystalline phase for both Si and Ge nanoclusters and the compress...
Structural and optical properties of A12O3 with Si and Ge nanocrystals
Yerci, Selçuk; Kara, İlkim Merve; Serincan, Ugur; Shandalov, Michael; Golan, Yuval; Turan, Raşit (2006-12-01)
Si and Ge nanocrystals were formed in Al2O3 matrix by ion implantation and subsequent annealing. The phase separation of the Si nanocrystals was observed using X-ray photoelectron spectroscopy by monitoring Si 2p electrons. During nanocrystal formation with a high temperature annealing Si-0 signals corresponding to Si nanoclusters increase while Si4+ signals related to a-SiO2 disappear from the spectrum. The transition from amorphous to nanocrystalline phase for both Si and Ge nanoclusters and the compressi...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
S. Yerci, U. SERİNCAN, R. Turan, and Y. GOLAN, “Formation of Ge nanocrystals in Al2O3 matrix,”
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
, pp. 759–763, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30402.