Formation of Ge nanocrystals in Al2O3 matrix

2008-02-01
Yerci, Selçuk
SERİNCAN, UĞUR
Turan, Raşit
GOLAN, YUVAL
Ge nanocrystals were formed in Al2O3 matrix by implantation of Ge ions into sapphire (alpha-Al2O3) substrates and subsequent annealing. Diagnostic techniques, Raman spectroscopy, XRD, TEM, EDS, and SAED were employed to monitor and study formation of Ge nanocrystals and their evolution during heat treatments. TEM and EDS analysis revealed the diffusion of Ge ions into the substrate during annealing process. While Ge nanocrystals with mean sizes of 15 nm were observed in the heavily implanted region small nanocrystals with mean sizes of 4 nm were identified underneath this region. Some grains of transition aluminas were formed in the implanted region which was amorphized during the implantation. Extensive stress between the transition aluminas and sapphire matrices and its effects on the matrix were detected. The effect of stress on the Raman and XRD spectra of Ge nanocrystals was discussed.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Suggestions

Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence
Yerci, Selçuk; DOĞAN, İLKER; Tokay, S.; GENİSEL, MUSTAFA; AYDINLI, ATİLLA; Turan, Raşit (2006-10-01)
Silicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800 degrees C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy a...
Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy
Serincan, U; Kartopu, G; Guennes, A; Finstad, TG; Turan, Raşit; Ekinci, Y; Bayliss, SC (IOP Publishing, 2004-02-01)
Ge nanocrystals formed in a SiO2 matrix by ion implantation were studied by Raman spectroscopy. It is shown that Raman analysis based on the phonon confinement model yields a successful explanation of the peculiar characteristics resulting from the nanocrystals. A broadening and a shift in the Raman peak are expected to result from the reduced size of the crystals. Asymmetry in the peak is attributed to the variations in the size of the nanocrystals. These effects were observed experimentally for the Ge nan...
Formation of semiconductor nanocrystals in sio2 by ion implantation
Serincan, Uğur; Turan, Raşit; Department of Physics (2004)
In this study, we used ion implantation technique to synthesize semiconductor (Ge, Si) nanocrystals in SiO2 matrix. Ge and Si nanocrystals have been successfully formed by Ge and Si implantation and post annealing. Implanted samples were examined by characterization techniques such as TEM, XPS, EDS, SAD, SIMS, PL, Raman and FTIR spectroscopy and the presence of Ge and Si nanocrystals in the SiO2 matrix has been evidenced by these measurements. It was shown that implantation dose, implantation energy, anneal...
Structural and optical properties of Al2O3 with Si and Ge nanocrystals
Yerci, Selçuk; Yıldız, İlker; Serincan, Ugur; Shandalov, Michael; Golan, Yuval; Turan, Raşit (2007-07-04)
Si and Ge nanocrystals were formed in Al2O3 matrix by ion implantation and subsequent annealing. The phase separation of the Si nanocrystals was observed using X-ray photoelectron spectroscopy by monitoring Si 2p electrons. During nanocrystal formation with a high temperature annealing Si4+ signals corresponding to Si nanoclusters increase while Si 4+ signals related to a-SiO2 disappear from the spectrum. The transition from amorphous to nanocrystalline phase for both Si and Ge nanoclusters and the compress...
Structural and optical properties of A12O3 with Si and Ge nanocrystals
Yerci, Selçuk; Kara, İlkim Merve; Serincan, Ugur; Shandalov, Michael; Golan, Yuval; Turan, Raşit (2006-12-01)
Si and Ge nanocrystals were formed in Al2O3 matrix by ion implantation and subsequent annealing. The phase separation of the Si nanocrystals was observed using X-ray photoelectron spectroscopy by monitoring Si 2p electrons. During nanocrystal formation with a high temperature annealing Si-0 signals corresponding to Si nanoclusters increase while Si4+ signals related to a-SiO2 disappear from the spectrum. The transition from amorphous to nanocrystalline phase for both Si and Ge nanoclusters and the compressi...
Citation Formats
S. Yerci, U. SERİNCAN, R. Turan, and Y. GOLAN, “Formation of Ge nanocrystals in Al2O3 matrix,” JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, pp. 759–763, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30402.