Formation of Ge nanocrystals in Al2O3 matrix

Date

2008-02-01

Author

Yerci, Selçuk
SERİNCAN, UĞUR
Turan, Raşit
GOLAN, YUVAL

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Ge nanocrystals were formed in Al2O3 matrix by implantation of Ge ions into sapphire (alpha-Al2O3) substrates and subsequent annealing. Diagnostic techniques, Raman spectroscopy, XRD, TEM, EDS, and SAED were employed to monitor and study formation of Ge nanocrystals and their evolution during heat treatments. TEM and EDS analysis revealed the diffusion of Ge ions into the substrate during annealing process. While Ge nanocrystals with mean sizes of 15 nm were observed in the heavily implanted region small nanocrystals with mean sizes of 4 nm were identified underneath this region. Some grains of transition aluminas were formed in the implanted region which was amorphized during the implantation. Extensive stress between the transition aluminas and sapphire matrices and its effects on the matrix were detected. The effect of stress on the Raman and XRD spectra of Ge nanocrystals was discussed.

Subject Keywords

Alumina, Sapphire, Ge, Nanocrystals, Ion implantation, Raman, XRD, TEM

URI

https://hdl.handle.net/11511/30402

Journal

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

DOI

https://doi.org/10.1166/jnn.2008.a018

Collections

Graduate School of Natural and Applied Sciences, Article

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Citation Formats

S. Yerci, U. SERİNCAN, R. Turan, and Y. GOLAN, “Formation of Ge nanocrystals in Al2O3 matrix,” JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, pp. 759–763, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30402.