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Formation of Ge nanocrystals in Al2O3 matrix
Date
2008-02-01
Author
Yerci, Selçuk
SERİNCAN, UĞUR
Turan, Raşit
GOLAN, YUVAL
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Ge nanocrystals were formed in Al2O3 matrix by implantation of Ge ions into sapphire (alpha-Al2O3) substrates and subsequent annealing. Diagnostic techniques, Raman spectroscopy, XRD, TEM, EDS, and SAED were employed to monitor and study formation of Ge nanocrystals and their evolution during heat treatments. TEM and EDS analysis revealed the diffusion of Ge ions into the substrate during annealing process. While Ge nanocrystals with mean sizes of 15 nm were observed in the heavily implanted region small nanocrystals with mean sizes of 4 nm were identified underneath this region. Some grains of transition aluminas were formed in the implanted region which was amorphized during the implantation. Extensive stress between the transition aluminas and sapphire matrices and its effects on the matrix were detected. The effect of stress on the Raman and XRD spectra of Ge nanocrystals was discussed.
Subject Keywords
Alumina
,
Sapphire
,
Ge
,
Nanocrystals
,
Ion implantation
,
Raman
,
XRD
,
TEM
URI
https://hdl.handle.net/11511/30402
Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
DOI
https://doi.org/10.1166/jnn.2008.a018
Collections
Graduate School of Natural and Applied Sciences, Article
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S. Yerci, U. SERİNCAN, R. Turan, and Y. GOLAN, “Formation of Ge nanocrystals in Al2O3 matrix,”
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
, pp. 759–763, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30402.