Formation of semiconductor nanocrystals in sio2 by ion implantation

Download
index.pdf
2004
Serincan, Uğur
Show full item record
203
views
84
downloads
In this study, we used ion implantation technique to synthesize semiconductor (Ge, Si) nanocrystals in SiO2 matrix. Ge and Si nanocrystals have been successfully formed by Ge and Si implantation and post annealing. Implanted samples were examined by characterization techniques such as TEM, XPS, EDS, SAD, SIMS, PL, Raman and FTIR spectroscopy and the presence of Ge and Si nanocrystals in the SiO2 matrix has been evidenced by these measurements. It was shown that implantation dose, implantation energy, annealing temperature, annealing time and annealing ambient are important parameters for the formation and evolution of semiconductor nanocrystals embedded in SiO2 matrix. The size and size distribution of Ge and Si nanocrystals were estimated successfully by fitting Raman and PL spectra obtained from Ge and Si implanted samples, respectively. It was demonstrated that Si implanted and post annealed samples exhibit two broad PL peaks at ~ 625 and 850 nm, even at room temperature. Origin of these peaks was investigated by temperature, excitation power and excitation wavelength dependence of PL spectrum and etch-measure experiments and it was shown that the peak observed at ~ 625 nm is related with defects (clusters or chain of Si located near the surface) while the other is related to the Si nanocrystals. As an expected effect of quantum size phenomenon, the peak observed at ~ 850 nm was found to depend on the nanocrystal size. Finally, the formation and evolution of Ge and Si nanocrystals were monitored by FTIR spectroscopy and it was shown that the deformation in SiO2 matrix caused by ion implantation tends to recover itself much quicker in the case of the Ge implantation. This is a result of effective segregation of Ge atoms at relatively low temperatures.
Physics.
http://etd.lib.metu.edu.tr/upload/3/12605016/index.pdf
https://hdl.handle.net/11511/14230
Graduate School of Natural and Applied Sciences, Thesis

Suggestions

Silicon nanocrystals embedded in sio2 for light emitting diode (led) applications
Kulakçı, Mustafa; Turan, Raşit; Department of Physics (2005)
In this study, silicon nanocrystals (NC) were synthesized in silicon dioxide matrix by ion implantation followed by high temperature annealing. Annealing temperature and duration were varied to study their effect on the nanocrystal formation and optical properties. Implantation of silicon ions was performed with different energy and dose depending on the oxide thickness on the silicon substrate. Before device fabrication, photoluminescence (PL) measurement was performed for each sample. From PL measurement ...
Dynamic ion behavior in plasma source ion implantation
Bozkurt, Bilge; Bilikmen, Kadri Sinan; Department of Physics (2006)
The aim of this work is to analytically treat the dynamic ion behavior during the evolution of the ion matrix sheath, considering the industrial application plasma source ion implantation for both planar and cylindrical targets, and then to de-velop a code that simulates this dynamic ion behavior numerically. If the sepa-ration between the electrodes in a discharge tube is small, upon the application of a large potential between the electrodes, an ion matrix sheath is formed, which fills the whole inter-ele...
Development of atomic force microscopy system and kelvin probe microscopy system for use in semiconductor nanocrystal characterization
Bostancı, Umut; Turan, Raşit; Department of Physics (2007)
Atomic Force Microscopy (AFM) and Kelvin Probe Microscopy (KPM) are two surface characterization methods suitable for semiconductor nanocrystal applications. In this thesis work, an AFM system with KPM capability was developed and implemented. It was observed that, the effect of electrostatic interaction of the probe cantilever with the sample can be significantly reduced by using higher order resonant modes for Kelvin force detection. Germanium nanocrystals were grown on silicon substrate using different g...
Growth and characterization of InSe single crystals
Deniz, Derya; Akınoğlu, Bülent Gültekin; Department of Physics (2004)
In this study, InSe single crystals were grown from the melt using conventional Bridgman-Stockbarger system. The grown crystals were implanted by N-ions to investigate the doping effect. the stoichiometry and the structural features were examined by scanning electron microscope and X-ray diffraction method, respectively. We have observed that the ingot was stoichiometric and the structure was hexagonal. Temperature dependent conductivity and Hall effect measurements were carried out to investigate the elect...
Calculation of phase diagrams and the thermodynamic quantities from the mean field models close to phase transitions in molecular and liquid crystals
Şen, Sema; Yurtseven, Hasan Hamit; Department of Physics (2009)
This study gives our calculations for the temperature-pressure and temperature-concentration phase diagrams using the mean field models applied to ammonium halides (NH4Cl, ND4Cl), ammonium sulfate ((NH4)2SO4/H2O), lithium potassium rubidium sulfate (LiK1-xRbxSO4), potassium pyrosulfate-potassium hydrogensulfate (K2S2O7-KHSO4), cholestanyl myristate-cholesteryl myristate (CnM-CrM), cholestanyl myristate-cholesteryl oleate (CnM-CO), benzene (C6H6) and ice. The phase line equations are derived from the free en...
Citation Formats
U. Serincan, “Formation of semiconductor nanocrystals in sio2 by ion implantation,” Ph.D. - Doctoral Program, Middle East Technical University, 2004.
METU IIS - Integrated Information Service open@metu.edu.tr