Excitation and temperature tuned photoluminescence in Tl2In2S3Se layered crystals

Date

2006-12-01

Author

Güler, Işıkhan
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

192
views

0
downloads

Photoluminescence spectra of Tl2In2S3Se layered single crystals have been studied in the wavelength region of 535-725 nm and in the temperature range of 22-58 K. Two photoluminescence bands centered at 564 (2.20 eV, A-band) and 642 nm (1.93 eV, B-band) were observed at T = 22 K. Variations of both bands have been investigated as a function of excitation laser intensity in the range from 16 to 516 mW cm(-2). These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located 0.02 and 0.01 eV below the bottom of conduction band to acceptor levels located 0.05 and 0.44 eV above the top of the valence band are suggested to be responsible for the observed A- and B-bands in the photoluminescence spectra, respectively.

Subject Keywords

Single-crystals, Tlins2, Recombination, Dependence, Tlgase2, Intensity, Energy, Band

URI

https://hdl.handle.net/11511/30869

Journal

ACTA PHYSICA POLONICA A

DOI

https://doi.org/10.12693/aphyspola.110.823

Collections

Graduate School of Natural and Applied Sciences, Article

Suggestions

OpenMETU
Core

Excitation intensity and temperature-dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals Goksen, K.; Hasanlı, Nızamı; Turan, Raşit (Wiley, 2006-08-01) Photoluminescence (PL) spectra of Tl4Ga3InSe8 layered crystals grown by Bridgman method have been studied in the wavelength region of 600-750 nm and in the temperature range of 17-68 K. A broad PL band centered at 652 nun (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm(-2) range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located...
Photoelectrical properties of TlGaSe2 single crystals Özdemir, Salahattin (2014-07-01) The spectral distribution of photocurrent (PC) of TlGaSe2 single crystals in the range of wavelengths between 500 nm and 700 nm possesses a single maximum at 2.04 eV corresponds to the direct energy band gap of this crystal. The PC is enhanced dramatically by pre-illuminations at low temperatures with band gap light. The temperature dependence of PC of the sample investigated in the temperature range from 80 K to 300 K at constant heating rate shows that the overlapping peaks in the PC spectrum are direct r...
Radiative Donor-Acceptor Pair Recombination in Tl2Ga2Se3S Layered Single Crystals Hasanlı, Nızamı (2013-07-01) The emission band spectra of Tl2Ga2Se3S layered crystals have been studied in the temperature range of 10-50 K and in the wavelength region of 540-700 nm. A broad photoluminescence band centered at 626 nm (1.98 eV) was observed at T = 10 K. Variation of emission band has been studied as a function of excitation laser intensity in the 0.4-51.5 mW cm(-2) range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission ...
Excitation intensity- and temperature-dependent photoluminescence in layered structured Tl2GaInSe2S2 crystals Hasanlı, Nızamı (AIP Publishing, 2013-02-21) Photoluminescence spectra of Tl2GaInSe2S2 layered crystals have been registered in the temperature range of 17-62 K and in the wavelength region of 525-690 nm. A broad visible photoluminescence band centered at 590 nm (2.10 eV) was observed at T 17 K. Variation of emission band has been studied as a function of laser excitation intensity in the 0.1-55.7 mW cm(-2) range. The analysis of the spectra reveals that the peak energy position changes with excitation intensity (blue shift). The radiative transitions...
Low-temperature photoluminescence in CuIn5S8 single crystals Hasanlı, Nızamı (2016-06-01) Photoluminescence (PL) spectra of CuIn5S8 single crystals grown by Bridgman method have been studied in the wavelength region of 720-1020 nm and in the temperature range of 10-34 K. A broad PL band centred at 861 nm (1.44 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.5- 60.2 mW cm(-2) range. Radiative transitions from shallow donor level located at 17 meV below the bottom of the conduction band to the acceptor level located at...

Citation Formats

I. Güler and N. Hasanlı, “Excitation and temperature tuned photoluminescence in Tl2In2S3Se layered crystals,” ACTA PHYSICA POLONICA A, pp. 823–831, 2006, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30869.