Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Low-temperature photoluminescence in CuIn5S8 single crystals
Date
2016-06-01
Author
Hasanlı, Nızamı
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
248
views
0
downloads
Cite This
Photoluminescence (PL) spectra of CuIn5S8 single crystals grown by Bridgman method have been studied in the wavelength region of 720-1020 nm and in the temperature range of 10-34 K. A broad PL band centred at 861 nm (1.44 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.5- 60.2 mW cm(-2) range. Radiative transitions from shallow donor level located at 17 meV below the bottom of the conduction band to the acceptor level located at 193 meV above the top of the valence band were suggested to be responsible for the observed PL band. An energy level diagram showing transitions in the band gap of the crystal has been presented.
Subject Keywords
Semiconductors
,
Photoluminescence
,
Donor-acceptor recombination
,
Defects
URI
https://hdl.handle.net/11511/33395
Journal
PRAMANA-JOURNAL OF PHYSICS
DOI
https://doi.org/10.1007/s12043-015-1181-7
Collections
Department of Physics, Article
Suggestions
OpenMETU
Core
Low-temperature photoluminescence in layered structured TlGa0.5In0.5Se2 crystals
Hasanlı, Nızamı (2013-01-15)
Photoluminescence (PL) spectra of TlGa0.5In0.5Se2 layered crystals have been studied in the wavelength region of 900-1020 nm and in the temperature range of 10-61 K. A broad PL band centered at 951 nm (1.304 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.15-51.5 mW cm(-2) range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission b...
Low-temperature visible photolummescence and optical absorption in Tl2In2Se3S semiconductor
Güler, Işıkhan; Hasanlı, Nızamı; Turan, Raşit (2007-05-31)
The emission band spectra of undoped T1(2)In(2)Se(3)S layered crystals have been studied in the temperature range of 25-63 K and the wavelength region of 570-700nm. A broad photoluminescence band centered at 633 nm (1.96 eV) was observed at T = 25 K. Variation of emission band has been studied as a function of excitation laser intensity in the 2.7-111.4mWcm(-2) range. Radiative transitions from shallow donor level located at 0.03 eV below the bottom of conduction band to deep acceptor level located at 0.23 ...
Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence
Hasanlı, Nızamı (2015-10-01)
Photoluminescence (PL) spectra of Tl4GaIn3Se2S6 layered crystals grown by the Bridgman method have been studied in the energy region of 2.02-2.35 eV and in the temperature range of 16-45 K. A broad PL band centered at 2.20 eV was observed at T = 16 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.1 to 149.9 mW cm(-2) range. Radiative transitions from shallow donor level located at 10 meV below the bottom of conduction band to moderately deep acceptor level...
Low-temperature thermoluminescence in layered structured Ga0.75In0.25Se single crystals
Isik, M.; Bulur, Enver; Hasanlı, Nızamı (2012-12-25)
Defect centers in Ga0.75In0.25Se single crystals have been studied performing the thermoluminescence measurements in the temperature range of 10-300 K. The observed glow curves were analyzed using curve fitting, initial rise, and different heating rate methods to determine the activation energies of the defect centers. Thermal cleaning process has been applied to decompose the overlapped curves. Four defect centers with activation energies of 9, 45,54 and 60 meV have been found as a result of the analysis. ...
Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals
Aydinli, A; Hasanlı, Nızamı; Goksen, K (2001-09-01)
Photoluminescence (PL) spectra of GaS0.5Se0.5 layered single crystals have been studied in the wavelength range of 565-860 nm and in the temperature range of 15-170 K. Two PL bands centered at 585 nm (2.120 eV) and 640 nm (1.938 eV) were observed at T = 15 K. Variations of both bands were studied as a function of excitation laser intensity in the range from 10(-3) to 15.9 W cm(-2). These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap. Radiative ...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
N. Hasanlı, “Low-temperature photoluminescence in CuIn5S8 single crystals,”
PRAMANA-JOURNAL OF PHYSICS
, pp. 1383–1390, 2016, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33395.