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Optical and photoelectrical properties of TlInSSe layered single crystals
Date
2018-01-01
Author
Güler, Işıkhan
Hasanlı, Nızamı
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Optical and electrical properties of TlInSSe layered single crystals have been studied by means of transmission, reflection and photoconductivity measurements. Transmission and reflection experiments have been carried out from 540 to 1000 nm at room temperature. Derivative analysis was applied to both transmission and reflection spectra and indirect band gap energy was found as 2.06 eV. Photoconductivity measurements have been performed in the temperature range from 245 to 300 K and in the voltage range from 10 to 80 V. From the temperature-dependent photoconductivity measurements, the observed single peak shifted to higher wavelengths with increase of temperature. The increase of photoconductivity with temperature is due to the increase in the mobility of photocarriers that can be explained by Bube model. From X112 method, room temperature indirect band gap of the crystal was also found as 2.06 eV. From voltage-dependent photoconductivity measurements, the peak maximum increased linearly with increase of voltage because of increase of the mobility of charge carriers. Dark current-voltage characteristic of TlInSSe crystal showed the ohmic behavior that means space charge limited current did not exist in the crystal. From the photocurrent with different illumination intensity analysis, the supralinear photoconductivity associated with the two center model was found. (C) 2017 Elsevier GmbH. All rights reserved.
Subject Keywords
Photoresponce
,
Optical Properties
,
Layered Single Crystals
URI
https://hdl.handle.net/11511/30879
Journal
OPTIK
DOI
https://doi.org/10.1016/j.ijleo.2017.11.120
Collections
Graduate School of Natural and Applied Sciences, Article
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I. Güler and N. Hasanlı, “Optical and photoelectrical properties of TlInSSe layered single crystals,”
OPTIK
, vol. 157, pp. 895–899, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30879.