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Optical properties of TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1) I. Composition- and temperature-tuned energy band gap
Date
2010-05-28
Author
Hasanlı, Nızamı
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Optical properties of the TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) have been studied by means of transmission and reflection measurements in the wavelength range of 400-1100 nm. The optical indirect band gap energies were determined through the analysis of the absorption data. It was found that the energy band gaps increase with increasing of gallium atoms content in the TlGaxIn1-xS2 mixed crystals. From the transmission measurements carried out in the temperature range of 10-300K, the rates of change of the indirect band gaps with temperature were determined for the different compositions of mixed crystals studied.
Subject Keywords
Semiconductors
,
Crystal growth
,
Optical properties
,
Optical properties
,
Light absorption and reflection
URI
https://hdl.handle.net/11511/33256
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
DOI
https://doi.org/10.1016/j.jallcom.2010.03.137
Collections
Department of Physics, Article
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N. Hasanlı, “Optical properties of TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1) I. Composition- and temperature-tuned energy band gap,”
JOURNAL OF ALLOYS AND COMPOUNDS
, pp. 148–151, 2010, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33256.