Low level NO gas sensing properties of Cu doped ZnO thin films prepared by SILAR method

Date

2018-02-01

Author

Corlu, T.
Karaduman, I.
Galioglu, S.
Akata Kurç, Burcu
YILDIRIM, MEMET ALİ
ATEŞ, AYTÜNÇ
ACAR, SELİM

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We report the successful synthesis and characterization of Zn1-xCuxO (x = 0.05, 0.10, 0.15, 0.20) thin films prepared by a simple and facile Successive Ionic Layer Adsorption and Reaction (SILAR) method. The nitrogen monoxide (NO) gas sensing properties of the Zn1-xCuxO sensors were studied systematically. The sensors were proved to have acceptable responses towards 20 ppb NO gas. Zn0.90Cu0.10O exhibited improved sensing performance at operating temperature of 55 degrees C compared to other samples. To improve sensor selectivity, a molecular zeolite filter was coated on the Zn0.90Cu0.10O sensor. The gas sensing results showed that the selectivity of intergrown zeolite filter coated Zn0.90Cu0.10O sensor enhanced significantly compared to uncoated sensors. (C)

Subject Keywords

Gas sensor, SILAR method

URI

https://hdl.handle.net/11511/31613

Journal

MATERIALS LETTERS

DOI

https://doi.org/10.1016/j.matlet.2017.10.121

Collections

Graduate School of Natural and Applied Sciences, Article

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Citation Formats

T. Corlu et al., “Low level NO gas sensing properties of Cu doped ZnO thin films prepared by SILAR method,” MATERIALS LETTERS, pp. 292–295, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/31613.