Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping

Download

10.1016:j.solmat.2019.02.025.pdf

Date

2019-06-01

Author

Kartopu, G.
Oklobia, O.
Turkay, D.
Diercks, D. R.
Gorman, B. P.
Barrioz, V.
Campbell, S.
Major, J. D.
Al Turkestani, M. K.
Yerci, Selçuk
Barnes, T. M.
Beattie, N. S.
Zoppi, G.
Jones, S.
Irvine, S. J. C.

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

143
views

161
downloads

Doping of CdTe using Group-V elements (As, P, and Sb) has gained interest in pursuit of increasing the cell voltage of CdTe thin film solar devices. Studies on bulk CdTe crystals have shown that much higher acceptor concentration than the traditional copper treatment is possible with As, P or Sb, enabled by high process temperature and/or rapid thermal quenching under Cd overpressure. We report a comprehensive study on in-situ As doping of poly-crystalline CdTe solar cells by MOCVD, whereby high acceptor densities, approaching 3 x 10(16) cm(-3) were achieved at low growth temperature of 390 degrees C. No As segregation could be detected at grain boundaries, even for 10(19) As cm(-3). A shallow acceptor level (+ 0.1 eV) due to As-Te substitutional doping and deep-level defects were observed at elevated As concentrations. Devices with variable As doping were analysed. Narrowing of the depletion layer, enhancement of bulk recombination, and reduction in device current and red response, albeit a small near infrared gain due to optical gap reduction, were observed at high concentrations. Device modelling indicated that the properties of the n-type window layer and associated interfacial recombination velocity are highly critical when the absorber doping is relatively high, demonstrating a route for obtaining high cell voltage.

Subject Keywords

CdTe, Group-V, Doping, Thin film, Photovoltaics, MOCVD

URI

https://hdl.handle.net/11511/32040

Journal

SOLAR ENERGY MATERIALS AND SOLAR CELLS

DOI

https://doi.org/10.1016/j.solmat.2019.02.025

Collections

Graduate School of Natural and Applied Sciences, Article

Suggestions

OpenMETU
Core

Investigation Of The Device Properties Of Cztse Thin Films For Solar Cells Bayraklı, Özge; Güllü, Hasan Hüseyin; Parlak, Mehmet (2016-10-02) Thin Film Solar Cell has received a considerable attention in the photovoltaic industry. While the efficiency of thin film amorphous silicon is about %14, the efficiency of Cu(In,Ga)Se2 (CIGS) thin film based solar cells ,is very popular in the recent year, reached the value of %20. But CIGS based solar cells have some constraints such as its extensive and large scale production in terms of availability of its constituent elements. On the other hand, Kesterit based solar cells such as Cu2ZnSnSe4 (CZTSe) hav...
Optimization of open-tube furnace diffusion with Bbr3 liquid source for industrial p-type boron doping process Orhan, Efe; Kökbudak, Gamze; Semiz, Emel; Es, Fırat; Turan, Raşit (Middle East Technical University; 2018-07-06) In this study, optimization of boron emitter for n-type crystalline Si solar cells has been studied in detail. Industrial open-tube (atmospheric) furnace with BBr3 as liquid B source was utilized which is a preferred dopant for the diffusion process of n-type wafers in industry [1] [2]. During the processes, full boat (270 wafers) n-type square samples were used to investigate the uniformity from gas zone to door zone and inside the wafer. To achieve uniform boron emitters on large n-type substrates, parame...
Production of hydrogenated nanocrystalline silicon based thin film transistor Aliyeva, Tamila; Atılgan, İsmail; Department of Physics (2010) The instability under bias voltage stress and low mobility of hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT), produced by plasma enhanced chemical vapor deposition (PECVD) technique, are the main problems impeding the implementation of active matrix arrays for light emitting diode display panels and their peripheral circuitry. Replacing a-Si:H by hydrogenated nanocrystalline silicon film (nc-Si:H) seems a solution due to its higher mobility and better stability. Therefore nc-Si:H TFT was...
Investigation on the incorporation of quantum dot thin film layers in the organic and inorganic solar cell structures Candan, İdris; Erçelebi, Ayşe Çiğdem; Parlak, Mehmet; Department of Physics (2016) Thin films based photovoltaic solar cell technologies have the Shockley-Queisser limit for maximum efficiencies and these cells can only collect photon in the specific energy range due to their band gap. New approaches are needed to improve the power conversion efficiency (PCE) of photovoltaic devices. Quantum dots (QDs) thin film layer inside any device structure is particularly attractive candidates to increase the PCE of solar cells due to their size adjustable band gap values, multiple exciton generatio...
Fabrication and doping of thin crystalline Si films prepared by e-beam evaporation on glass substrate Sedani, Salar Habibpur; Turan, Raşit; Ünalan, Hüsnü Emrah; Department of Micro and Nanotechnology (2013) In this thesis study, fabrication and doping of silicon thin films prepared by electron beam evaporation equipped with effusion cells for solar cell applications have been investigated. Thin film amorphous Si (a-Si) layers have been fabricated by the electron beam evaporator and simultaneously doped with boron (B) and phosphorous (P) using effusion cells. Samples were prepared on glass substrates for the future solar cell operations. Following the deposition of a-Si thin film, crystallization of the films h...

Citation Formats

G. Kartopu et al., “Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping,” SOLAR ENERGY MATERIALS AND SOLAR CELLS, pp. 259–267, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32040.