Optimization of open-tube furnace diffusion with Bbr3 liquid source for industrial p-type boron doping process

2018-07-06
Orhan, Efe
Kökbudak, Gamze
Semiz, Emel
Es, Fırat
Turan, Raşit
In this study, optimization of boron emitter for n-type crystalline Si solar cells has been studied in detail. Industrial open-tube (atmospheric) furnace with BBr3 as liquid B source was utilized which is a preferred dopant for the diffusion process of n-type wafers in industry [1] [2]. During the processes, full boat (270 wafers) n-type square samples were used to investigate the uniformity from gas zone to door zone and inside the wafer. To achieve uniform boron emitters on large n-type substrates, parameters of the diffusion process such as temperature, BBr3 flow, BBr3 flow duration and oxygen flow were varied. Resulting emitters went through a BSG removal step followed by sheet resistance mapping characterization. Especially, the tradeoff between BBr3 and O2 flow and their effects on sheet resistance was examined. Additionally, the relation between the borosilicate glass formation and sheet resistance was investigated.
Citation Formats
E. Orhan, G. Kökbudak, E. Semiz, F. Es, and R. Turan, “Optimization of open-tube furnace diffusion with Bbr3 liquid source for industrial p-type boron doping process,” presented at the PVCON 2018 : Photovoltaic Conference, Ankara, Turkey, 2018, Accessed: 00, 2021. [Online]. Available: https://hdl.handle.net/11511/86964.