Barrier engineering for HgCdTe unipolar detectors on alternative substrates

Date

2019-03-01

Author

Uzgur, Fatih
Kocaman, Serdar

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

183
views

0
downloads

Delta-doped layers together with compositionally grading have been utilized to get nBn configurations for the HgCdTe material system in all the short-wave (SWIR), medium-wave (MWIR) and long-wave (LWIR) infrared bands. Shockley Read Hall (SRH), trap-assisted tunneling (TAT), Auger and radiative recombination mechanisms have been included in the analyses and strong suppression of SRH and TAT currents have been demonstrated with the designed structures. This methodology is especially useful when the carrier lifetime is limited due to alternative substrate usage. No degradation in photo-response has been observed as adjusting the valence band offset is quite flexible with the delta-doped nano-layers and the valence band barrier can be completely removed. Calculations have been performed for 1-3 mu s lifetime targeting the alternative substrate applications and up to 60 degrees of increase in the operation has been shown to be possible.

Subject Keywords

Photodetector, HgCdTe, Barrier structures, nBn

URI

https://hdl.handle.net/11511/32279

Journal

INFRARED PHYSICS & TECHNOLOGY

DOI

https://doi.org/10.1016/j.infrared.2018.12.026

Collections

Graduate School of Natural and Applied Sciences, Article

Suggestions

OpenMETU
Core

InGaAs nBn SWIR detector design with lattice-matched InAlGaAs barrier Uzgur, Fatih; Kocaman, Serdar (2019-01-01) Dark current optimization with band gap engineering has been numerically studied for InGaAs nBn type infrared photodetectors. Undoped InAlGaAs grading layers are utilized in constructing the barrier and dipole delta-doped layers are placed in both sides of the graded layers for eliminating valence band offset. As a result, the high band gap barrier layer blocks the majority carriers and allows minority carrier flow while minimizing various dark current components, as expected from an nBn detector. Substanti...
Barrier engineering for high-performance nBn infrared photodetectors Uzgur, Fatih; Kocaman, Serdar; Department of Micro and Nanotechnology (2020) Despite intensive studies, for high-performance applications, lowering dark current is still a challenging problem for pn-type infrared (IR) photodetectors. Over the last two decades, barrier-type IR detectors have been proposed as a solution for obtaining high-performance and high operation temperature conditions. However, the valence band discontinuity limits the material alternatives to which the barrier detector architecture can be applied. In this thesis work, it has been numerically shown that some ma...
Performance Evaluation and Selection of PWM Switching and Control Methods for Grid Connected Modular Multilevel Converters Ciftci, Baris; Hava, Ahmet Masum (2015-09-24) This paper focuses on the determination of suitable carrier based pulse width modulation (PWM) switching and control methods for grid connected modular multilevel converters (MMCs). Characterization of various level-shifted and phase-shifted carrier based PWM methods are provided in terms of output voltage waveforms both for N+1 and 2N+1 level output phase voltages. Carrier based PWM method based control approaches are evaluated for MMC. Performances of different control methods are evaluated and compared f...
Operating principles and practical design aspects of all SiC DC/AC/DC converter for MPPT in grid-connected PV supplies ÖZTÜRK, SERKAN; Popos, Polat; Utalay, Volkan; Koc, Atila; Ermiş, Muammer; ÇADIRCI, IŞIK (2018-12-01) A 20 kW, 20 kHz high frequency (HF) link maximum power point tracking (MPPT) converter for a grid-connected PV supply, based on all silicon carbide (SiC) power semiconductors, is presented. In the developed converter, SiC power MOSFETs are used in the low-voltage PV panel side and SiC Schottky diodes on the high-voltage DC output, in order to maximize the power conversion efficiency and the power density. Operating principles of the resulting dual H-bridge MPPT converter and the practical aspects of the con...
HYBRID BEAMFORMING WITH TWO BIT RF PHASE SHIFTERS IN SINGLE GROUP MULTICASTING Demir, Özlem Tuğfe; Tuncer, Temel Engin (2016-03-25) In this paper, an efficient hybrid beamforming architecture combining analog and digital beamforming is proposed to reduce the number of radio frequency (RF) chains. It provides a good compromise between the higher degree of freedom of digital beamforming and hardware cost and complexity. In this hybrid system, two bit RF phase shifters are used as analog beamformers due to the fact that this enables the conversion of the combinatorial optimization problem to a continuous programming formulation. The overal...

Citation Formats

F. Uzgur and S. Kocaman, “Barrier engineering for HgCdTe unipolar detectors on alternative substrates,” INFRARED PHYSICS & TECHNOLOGY, pp. 123–128, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32279.