InGaAs nBn SWIR detector design with lattice-matched InAlGaAs barrier

Date

2019-01-01

Author

Uzgur, Fatih
Kocaman, Serdar

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Dark current optimization with band gap engineering has been numerically studied for InGaAs nBn type infrared photodetectors. Undoped InAlGaAs grading layers are utilized in constructing the barrier and dipole delta-doped layers are placed in both sides of the graded layers for eliminating valence band offset. As a result, the high band gap barrier layer blocks the majority carriers and allows minority carrier flow while minimizing various dark current components, as expected from an nBn detector. Substantial improvement has been shown in the dark current level without compromising any photoresponse compared to the conventional pn junction and recently proposed all InGaAs nBn type photodetectors.

Subject Keywords

Infrared imaging, Barrier photodetectors, Optoelectronic devices

URI

https://hdl.handle.net/11511/32013

Journal

TURKISH JOURNAL OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES

DOI

https://doi.org/10.3906/elk-1802-197

Collections

Graduate School of Natural and Applied Sciences, Article

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Citation Formats

F. Uzgur and S. Kocaman, “InGaAs nBn SWIR detector design with lattice-matched InAlGaAs barrier,” TURKISH JOURNAL OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES, pp. 1–10, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32013.