The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2

Date

2005-08-01

Author

Desnica, UV
Dubcek, P
Salamon, K
Desnica-Frankovic, ID
Buljan, M
Bernstoff, S
Serincan, U
Turan, Raşit

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Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of Ge quantum dots in Ge-implanted SiO2. Ge ion doses were up to 10(17)/cm(2), and subsequent annealing temperatures up to T-a = 1000 degrees C. Results suggest that ordered and correlated Ge QDs can be achieved by high-dose implantation followed by medium-T annealing.

URI

https://hdl.handle.net/11511/32950

Journal

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

DOI

https://doi.org/10.1016/j.nimb.2005.06.062

Collections

Department of Physics, Article

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Citation Formats

U. Desnica et al., “The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2,” NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, pp. 272–275, 2005, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/32950.