Optical characterization of Ga2SeS layered crystals by transmission, reflection and ellipsometry

Date

2015-07-10

Author

IŞIK, MEHMET
Hasanlı, Nızamı

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Optical properties of Ga2SeS crystals grown by Bridgman method were investigated by transmission, reflection and ellipsometry measurements. Analysis of the transmission and reflection measurements performed in the wavelength range of 400-1100 nm at room temperature indicated the presence of indirect and direct transitions with 2.28 eV and 2.38 eV band gap energies. Ellipsometry measurements were carried out in the 1.2-6.0 eV spectral region to get information about optical constants, real and imaginary parts of the pseudodielectric function. Moreover, the critical point (CP) analysis of the second derivative spectra of the pseudodielectric constant in the above band gap region was accomplished. The analysis revealed the presence of five CPs with energies of 3.87, 4.16, 4.41, 4.67 and 5.34 eV.

Subject Keywords

Semiconductors, Optical properties, Ellipsometry, Absorption

URI

https://hdl.handle.net/11511/39324

Collections

Department of Physics, Article