Optical characterization of Ga2SeS layered crystals by transmission, reflection and ellipsometry

Download
2015-07-10
IŞIK, MEHMET
Hasanlı, Nızamı
Optical properties of Ga2SeS crystals grown by Bridgman method were investigated by transmission, reflection and ellipsometry measurements. Analysis of the transmission and reflection measurements performed in the wavelength range of 400-1100 nm at room temperature indicated the presence of indirect and direct transitions with 2.28 eV and 2.38 eV band gap energies. Ellipsometry measurements were carried out in the 1.2-6.0 eV spectral region to get information about optical constants, real and imaginary parts of the pseudodielectric function. Moreover, the critical point (CP) analysis of the second derivative spectra of the pseudodielectric constant in the above band gap region was accomplished. The analysis revealed the presence of five CPs with energies of 3.87, 4.16, 4.41, 4.67 and 5.34 eV.
MODERN PHYSICS LETTERS B

Suggestions

Optical properties of Cu3In5S9 single crystals by spectroscopic ellipsometry
Işık, Mehmet; Nasser, H.; Ahmedova, F.; Guseinov, A.; Hasanlı, Nızamı (2018-01-01)
Cu3In5S9 single crystals were investigated by structural methods of x-ray diffraction and energy dispersive spectroscopy and optical techniques of ellipsometry and reflection carried out at room temperature. The spectral dependencies of optical constants; dielectric function, refractive index and extinction coefficient, were plotted in the range of 1.2-6.2 eV from ellipsometric data. The spectra of optical constants obtained from ellipsometry analyses and reflectance spectra presented a sharp change around ...
Optical characterization of CuIn5S8 crystals by ellipsometry measurements
IŞIK, MEHMET; Gasanly, Nizami (2016-04-01)
Optical properties of CuIn5S8 crystals grown by Bridgman method were investigated by ellipsometry measurements. Spectral dependence of optical parameters; real and imaginary parts of the pseudodielectric function, pseudorefractive index, pseudoextinction coefficient, reflectivity and absorption coefficients were obtained from the analysis of ellipsometry experiments performed in the 1.2-6.2 eV spectral region. Analysis of spectral dependence of the absorption coefficient revealed the existence of direct ban...
Ellipsometry study of optical parameters of AgIn5S8 crystals
IŞIK, MEHMET; Gasanly, NIZAMI (2015-12-01)
Agln(5)S(8) crystals grown by Bridgman method were characterized for optical properties by ellipsometry measurements. Spectral dependence of optical parameters; real and imaginary parts of the pseudodielectric function, pseudorefractive index, pseudoextinction coefficient, reflectivity and absorption coefficient were obtained from ellipsometiy experiments carried out in the 1.2-6.2 eV range. Direct band gap energy of 1.84 eV was found from the analysis of absorption coefficient vs. photon energy. The oscill...
Optical properties of TlGaxIn1-xS2 layered mixed crystals (0 <= x <= 1) I. Composition- and temperature-tuned energy band gap
Hasanlı, Nızamı (2010-05-28)
Optical properties of the TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) have been studied by means of transmission and reflection measurements in the wavelength range of 400-1100 nm. The optical indirect band gap energies were determined through the analysis of the absorption data. It was found that the energy band gaps increase with increasing of gallium atoms content in the TlGaxIn1-xS2 mixed crystals. From the transmission measurements carried out in the temperature range of 10-300K, the rates of change of t...
Temperature-dependent optical properties of GaSe layered single crystals
IŞIK, MEHMET; TUĞAY, EVRİN; Gasanly, N. M. (2016-01-01)
Optical properties of GaSe single crystals have been investigated using temperature-dependent transmission and room temperature reflection measurements in the wavelength range of 380-1100nm. The analysis of the absorption data at room temperature showed the existence of indirect transitions in the crystal with energy band gap of 1.98eV. Temperature dependence of the transmission measurements revealed the shift of the absorption edge toward lower energy as temperature is increased from 10 to 280K. The rate o...
Citation Formats
M. IŞIK and N. Hasanlı, “Optical characterization of Ga2SeS layered crystals by transmission, reflection and ellipsometry,” MODERN PHYSICS LETTERS B, pp. 0–0, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39324.