Dark electrical conductivity and photoconductivity of Ga(4)Se(3)S layered single crystals

Date

2008-11-01

Author

QASRAWI, ATEF FAYEZ HASAN
Hasanlı, Nızamı

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Ga(4)Se(3)S layered crystals were studied through the dark electrical conductivity, and illumination- and temperature-dependent photoconductivity in the temperature region of 100-350 K. The dark electrical conductivity reflected the existence of two energy states located at 3 10 and 60 meV being dominant above and below 170 K, respectively. The photoconductivity measurements revealed the existence of another two energy levels located at 209 and 91 meV above and below 230 K. The photoconductivity was observed to increase with increasing temperature. The illumination dependence of photoconductivity was found to exhibit linear and supralinear recombination above and below 280 K, respectively. The change in recombination mechanism was attributed to the exchange in the behavior of sensitizing and recombination centers.

Subject Keywords

Semiconductors, Semiconductors, Crystal growth, Electrical conductivity

URI

https://hdl.handle.net/11511/33299

Journal

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

DOI

https://doi.org/10.1016/j.jpcs.2008.06.140

Collections

Department of Physics, Article

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Citation Formats

A. F. H. QASRAWI and N. Hasanlı, “Dark electrical conductivity and photoconductivity of Ga(4)Se(3)S layered single crystals,” JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, pp. 2719–2722, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33299.