Dark electrical conductivity and photoconductivity of Ga(4)Se(3)S layered single crystals

Date

2008-11-01

Author

QASRAWI, ATEF FAYEZ HASAN
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

70
views

0
downloads

Ga(4)Se(3)S layered crystals were studied through the dark electrical conductivity, and illumination- and temperature-dependent photoconductivity in the temperature region of 100-350 K. The dark electrical conductivity reflected the existence of two energy states located at 3 10 and 60 meV being dominant above and below 170 K, respectively. The photoconductivity measurements revealed the existence of another two energy levels located at 209 and 91 meV above and below 230 K. The photoconductivity was observed to increase with increasing temperature. The illumination dependence of photoconductivity was found to exhibit linear and supralinear recombination above and below 280 K, respectively. The change in recombination mechanism was attributed to the exchange in the behavior of sensitizing and recombination centers.

Subject Keywords

Semiconductors, Semiconductors, Crystal growth, Electrical conductivity

URI

https://hdl.handle.net/11511/33299

Journal

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

DOI

https://doi.org/10.1016/j.jpcs.2008.06.140

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Near-infrared photoluminescence and thermally stimulated current in Cu3Ga5Se9 layered crystals: A comparative study Hasanlı, Nızamı (2016-07-01) Near-infrared photoluminescence (PL) and thermally stimulated current (TSC) spectra of Cu3Ga5Se9 layered crystals grown by Bridgman method have been studied in the photon energy region of 1.35-1.46 eV and the temperature range of 15-115 K (PL) and 10-170 K (TSC). An infrared PL band centered at 1.42 eV was revealed at T = 15 K. Radiative transitions from shallow donor level placed at 20 meV to moderately deep acceptor level at 310 meV were suggested to be the reason of the observed PL band. TSC curve of Cu3...
Low-temperature visible photolummescence and optical absorption in Tl2In2Se3S semiconductor Güler, Işıkhan; Hasanlı, Nızamı; Turan, Raşit (2007-05-31) The emission band spectra of undoped T1(2)In(2)Se(3)S layered crystals have been studied in the temperature range of 25-63 K and the wavelength region of 570-700nm. A broad photoluminescence band centered at 633 nm (1.96 eV) was observed at T = 25 K. Variation of emission band has been studied as a function of excitation laser intensity in the 2.7-111.4mWcm(-2) range. Radiative transitions from shallow donor level located at 0.03 eV below the bottom of conduction band to deep acceptor level located at 0.23 ...
Temperature-dependent optical properties of GaSe layered single crystals IŞIK, MEHMET; TUĞAY, EVRİN; Gasanly, N. M. (2016-01-01) Optical properties of GaSe single crystals have been investigated using temperature-dependent transmission and room temperature reflection measurements in the wavelength range of 380-1100nm. The analysis of the absorption data at room temperature showed the existence of indirect transitions in the crystal with energy band gap of 1.98eV. Temperature dependence of the transmission measurements revealed the shift of the absorption edge toward lower energy as temperature is increased from 10 to 280K. The rate o...
Compositional dependence of refractive index and oscillator parameters in T1GaS(2x)Se(2(1-x)) layered mixed crystals (0 <= x <= 1) Hasanlı, Nızamı (2012-09-14) Optical characterization of TIGaS2xSe2(1-x) mixed crystals have been carried out at room temperature using the transmission and reflection measurements in the wavelength range of 400-1100 nm. The spectral dependence of the refractive index for all compositions of studied crystals were obtained. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The compositional dependencies of refractive index dispersion parameters: oscillator energy, di...
Temperature-dependent optical properties of GaSe layered single crystals Hasanlı, Nızamı (2016-8-01) Optical properties of GaSe single crystals have been investigated using temperature-dependent transmission and room temperature reflection measurements in the wavelength range of 380–1100 nm. The analysis of the absorption data at room temperature showed the existence of indirect transitions in the crystal with energy band gap of 1.98 eV. Temperature dependence of the transmission measurements revealed the shift of the absorption edge toward lower energy as temperature is increased from 10 to 280 K. The rat...

Citation Formats

A. F. H. QASRAWI and N. Hasanlı, “Dark electrical conductivity and photoconductivity of Ga(4)Se(3)S layered single crystals,” JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, pp. 2719–2722, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33299.