Low-temperature visible photolummescence and optical absorption in Tl2In2Se3S semiconductor

Date

2007-05-31

Author

Güler, Işıkhan
Hasanlı, Nızamı
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

162
views

0
downloads

The emission band spectra of undoped T1(2)In(2)Se(3)S layered crystals have been studied in the temperature range of 25-63 K and the wavelength region of 570-700nm. A broad photoluminescence band centered at 633 nm (1.96 eV) was observed at T = 25 K. Variation of emission band has been studied as a function of excitation laser intensity in the 2.7-111.4mWcm(-2) range. Radiative transitions from shallow donor level located at 0.03 eV below the bottom of conduction band to deep acceptor level located at 0.23 eV above the top of the valence band were suggested to be responsible for the observed PL band. From X-ray powder diffraction and optical absorption study, the parameters of monoclinic unit cell and the energy of indirect band gap were determined, respectively.

Subject Keywords

Photoluminescence, Semiconductors, Layered crystals, Defect levels, Defect levels, Photoluminescence, Semiconductors, Layered crystals, Defect levels

URI

https://hdl.handle.net/11511/30125

Journal

PHYSICA B-CONDENSED MATTER

DOI

https://doi.org/10.1016/j.physb.2007.03.002

Collections

Graduate School of Natural and Applied Sciences, Article

Suggestions

OpenMETU
Core

Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal Hasanlı, Nızamı; Aydinli, A; Baten, SMA (2000-02-01) The photoluminescence (PL) spectra of TlGaSe2 layered single crystals were investigated in the 8.5-35 K temperature, 0.2-15.2 W cm(-2) excitation laser intensity, and in the 600-700 nm wavelength range. The PL spectrum has a slightly asymmetric Gaussian lineshape with a peak position located at 1.937 eV (640 nm) at 8.5 K. The PL is quenched with increasing temperature. The blue shift of the PL peak and the sublinear increase of the PL intensity with increasing laser intensity is explained using the inhomoge...
Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence Hasanlı, Nızamı (2015-10-01) Photoluminescence (PL) spectra of Tl4GaIn3Se2S6 layered crystals grown by the Bridgman method have been studied in the energy region of 2.02-2.35 eV and in the temperature range of 16-45 K. A broad PL band centered at 2.20 eV was observed at T = 16 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.1 to 149.9 mW cm(-2) range. Radiative transitions from shallow donor level located at 10 meV below the bottom of conduction band to moderately deep acceptor level...
Low-temperature photoluminescence in layered structured TlGa0.5In0.5Se2 crystals Hasanlı, Nızamı (2013-01-15) Photoluminescence (PL) spectra of TlGa0.5In0.5Se2 layered crystals have been studied in the wavelength region of 900-1020 nm and in the temperature range of 10-61 K. A broad PL band centered at 951 nm (1.304 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.15-51.5 mW cm(-2) range. The analysis of the spectra reveals that the peak energy position changes with laser excitation intensity (blue shift). This behavior of the emission b...
Donor-acceptor pair recombination in Tl2InGaS4 layered crystals Goksen, K; Hasanlı, Nızamı; Ozkan, H; Aydinli, A (2005-08-01) Photoluminescence (PL) spectra of Tl2InGaS4 layered single crystals were studied in the temperature range 15-150 K and wide laser excitation intensity range 0.01-110.34 Wcm(-2). We observed a total of three PL, bands, one centered at 542 nm (2.286 eV, A-band), one at 607 nm (2.041 eV, B-band), and one at 707 nm (1.754 eV, C-band), at various excitation intensities. The A- and the B-bands were determined to be due to radiative transitions from moderately deep donor levels located at 0.189 and 0.443 eV below ...
Low-temperature photoluminescence in CuIn5S8 single crystals Hasanlı, Nızamı (2016-06-01) Photoluminescence (PL) spectra of CuIn5S8 single crystals grown by Bridgman method have been studied in the wavelength region of 720-1020 nm and in the temperature range of 10-34 K. A broad PL band centred at 861 nm (1.44 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.5- 60.2 mW cm(-2) range. Radiative transitions from shallow donor level located at 17 meV below the bottom of the conduction band to the acceptor level located at...

Citation Formats

I. Güler, N. Hasanlı, and R. Turan, “Low-temperature visible photolummescence and optical absorption in Tl2In2Se3S semiconductor,” PHYSICA B-CONDENSED MATTER, pp. 116–120, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/30125.