50 nm Hall sensors for room temperature scanning Hall probe microscopy

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2004-02-01

Author

SANDHU, ADARSH
KUROSAWA, KOUİCHİ
DEDE, MUNIR
Oral, Ahmet

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Bismuth nano-Hall sensors with dimensions similar to50 nm x 50 nm were fabricated using a combination of optical lithography and focused ion beam milling. The Hall coefficient, series resistance and optimum magnetic field sensitivity of the sensors were 4 x 10(-4) Omega/G 9.1 kOmega and 0.8 G/ rootHz, respectively. A 50 nm nano-Bi Hall sensor was installed into a room temperature scanning Hall probe microscope and successfully used for directly imaging ferromagnetic domains of low coercivity garnet thin films.

Subject Keywords

Scanning Hall probe microscopy, Nanomagnetics, Hall sensors, Magnetic domains

URI

https://hdl.handle.net/11511/33403

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS

DOI

https://doi.org/10.1143/jjap.43.777

Collections

Department of Physics, Article

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Citation Formats

A. SANDHU, K. KUROSAWA, M. DEDE, and A. Oral, “50 nm Hall sensors for room temperature scanning Hall probe microscopy,” JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, pp. 777–778, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33403.