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50 nm Hall sensors for room temperature scanning Hall probe microscopy

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2004-02-01
SANDHU, ADARSH
KUROSAWA, KOUİCHİ
DEDE, MUNIR
Oral, Ahmet
Bismuth nano-Hall sensors with dimensions similar to50 nm x 50 nm were fabricated using a combination of optical lithography and focused ion beam milling. The Hall coefficient, series resistance and optimum magnetic field sensitivity of the sensors were 4 x 10(-4) Omega/G 9.1 kOmega and 0.8 G/ rootHz, respectively. A 50 nm nano-Bi Hall sensor was installed into a room temperature scanning Hall probe microscope and successfully used for directly imaging ferromagnetic domains of low coercivity garnet thin films.