Room-temperature scanning Hall probe microscope (RT-SHPM) imaging of garnet films using new high-performance InSb sensors

Oral, Ahmet
High-performance InSb micro-HaIl sensors were fabricated by optical lithography and incorporated in a room-temperature scanning Hall probe microscope for imaging of localized magnetic fluctuations in close proximity to the surfaces of crystalline uniaxial garnet films. The room-temperature noise figure of the InSb sensors was 6-10 mG/v/Hz, which is an order of magnitude better than GaAs-AlGaAs two-dimensional electron gas sensors used to date.


Temperature -dependent optical and electrical characterization of Cu-Ga-S thin films and their diode characteristics on n-Si
Gullu, H. H.; Isik, M.; Hasanlı, Nızamı; Parlak, Mehmet (Elsevier BV, 2020-04-01)
In this paper, optical and electrical properties of thermally deposited Cu-Ga-S thin films were investigated using temperature-dependent optical transmission and electrical conductivity measurements. The analysis of the transmission spectra resulted in formation of three direct optical transitions due to the possible valence band splitting in the structure. The band gap values were calculated by means of absorption coefficient and incident photon energy was found in decreasing behavior as the temperature ri...
Variable Temperature-Scanning Hall Probe Microscopy With GaN/AlGaN Two-Dimensional Electron Gas (2DEG) Micro Hall Sensors in 4.2-425 K Range Using Novel Quartz Tuning Fork AFM Feedback
Akram, R.; Dede, A.; Oral, Ahmet (Institute of Electrical and Electronics Engineers (IEEE), 2008-11-01)
In this paper, we present the fabrication and variable temperature (VT) operation of Hall sensors, based on GaN/AlGaN heterostructure with a two-dimensional electron gas (2DEG) as an active layer, integrated with quartz tuning fork (QTF) in atomic force-guided (AFM) scanning Hall probe microscopy (SHPM). Physical strength and a wide bandgap of GaN/AlGaN heterostructure makes it a better choice to be used for SHPM at elevated temperatures, compared to other compound semiconductors (AlGaAs/GaAs and InSb), whi...
Material and Si-based diode analyses of sputtered ZnTe thin films
Güllü, Hasan Hüseyin; Surucu, O. Bayrakli; Isik, M.; Terlemezoglu, M.; Parlak, M. (Springer Science and Business Media LLC, 2020-07-01)
Structural, optical, and electrical properties ZnTe thin films grown by magnetron sputtering technique were studied by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and electrical conductivity measurements. Structural analyses showed that ZnTe thin films grown on soda-lime glass substrates have a cubic crystalline structure. This crystalline nature of the films was also discussed in terms of Raman active modes. From atomic force microscopy images, the smooth and dense surface profile was o...
A low-cost uncooled infrared microbolometer detector in standard CMOS technology
Tezcan, DS; Eminoglu, S; Akın, Tayfun (Institute of Electrical and Electronics Engineers (IEEE), 2003-02-01)
This paper reports the development of a low-cost uncooled infrared microbolometer detector using a commercial 0.8 mum CMOS process, where the CMOS n-well layer is used as the infrared sensitive material. The n-well is suspended by front-end bulk-micromachining of the fabricated CMOS dies using electrochemical etch-stop technique in TMAH. Since this approach does not require any lithography or infrared sensitive material deposition after CMOS fabrication, the detector cost is almost equal to the CMOS chip co...
Bismuth nano-Hall probes fabricated by focused ion beam milling for direct magnetic imaging by room temperature scanning Hall probe microscopy
SANDHU, A; MASUDA, H; KUROSAWA, K; Oral, Ahmet; BENDİNG, SJ (Institution of Engineering and Technology (IET), 2001-10-25)
Bismuth nano-Hall probes with dimensions similar to 120 x 120 nm were fabricated by focused ion beam milling and used for the direct room temperature magnetic imaging of crystalline garnet thin films and strontium ferrite permanent magnets by scanning Hall probe microscopy. At driving currents of 40 muA, the Hall coefficient and magnetic field sensitivity of the Bi nano-Hall probes were 3.3 x 10(-4) CYG and 7.2 G/root Hz, respectively.
Citation Formats
A. Oral, M. DEDE, H. MASUDA, A. OKAMOTO, I. SHİBASAKİ, and A. SANDHU, “Room-temperature scanning Hall probe microscope (RT-SHPM) imaging of garnet films using new high-performance InSb sensors,” IEEE TRANSACTIONS ON MAGNETICS, pp. 2438–2440, 2002, Accessed: 00, 2020. [Online]. Available: