The electrical properties of silicon Schottky diodes.

Date

1982

Author

Oral, Şenay

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URI

https://hdl.handle.net/11511/3451

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Graduate School of Natural and Applied Sciences, Thesis

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THE STRUCTURAL AND ELECTRONIC PROPERTIES OF BNxAs1-x ALLOYS Mohammad, Rezek; Katırcıoğlu, Şenay (2012-10-01) The structural and electronic properties of BNxAs1-x alloys have been investigated in the total range of nitrogen by the FP-LAPW method based on DFT within the EV-PW-GGA scheme. The equilibrium lattice constants, bulk moduli, first-order pressure derivatives of the bulk moduli, and cohesive energies have been obtained by total energy calculations of the alloys after both volume and geometry optimizations. The large bowing parameters found for the lattice constants and bulk moduli have demonstrated that the ...

Citation Formats

Ş. Oral, “The electrical properties of silicon Schottky diodes.,” Middle East Technical University, 1982.