N-structure based on InAs/AlSb/GaSb superlattice photodetectors

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2015-03-01

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HOŞTUT, MUSTAFA
ALYÖRÜK, MUSTAFA MENDERES
TANSEL, TUNAY
KILIÇ, ALİ YAVUZ
Turan, Raşit
AYDINLI, ATİLLA
ERGÜN, YÜKSEL

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We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies was investigated using first principles calculations taking into account InSb and AlAs as possible interface transition alloys between AlSb/InAs layers and individual layer thicknesses of GaSb and InAs. T2SL N-structure was optimized to operate as a MWIR detector based on these theoretical approaches tailoring the band gap and HH-LH splitting energies with InSb transition layers between InAs/AlSb interfaces. Experimental results show that AlSb layers in the structure act as carrier blocking barriers reducing the dark current. Dark current density and RoA product at 125 K were obtained as 1.8 x 10(-6) A cm(-2) and 800 Omega cm(2) at zero bias, respectively. The specific detectivity was measured as 3 x 10(12) Jones with cut-off wavelengths of 4.3 mu m at 79 K reaching to 2 x 10(9) Jones and 4.5 mu m at 255 K.

Subject Keywords

Electrical and Electronic Engineering, General Materials Science, Condensed Matter Physics

URI

https://hdl.handle.net/11511/34575

Journal

SUPERLATTICES AND MICROSTRUCTURES

DOI

https://doi.org/10.1016/j.spmi.2014.12.022

Collections

Department of Physics, Article

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Citation Formats

M. HOŞTUT et al., “N-structure based on InAs/AlSb/GaSb superlattice photodetectors,” SUPERLATTICES AND MICROSTRUCTURES, pp. 116–122, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34575.