Subband structure and excitonic binding of graded GaAs/Ga1-xAlxAs quantum wells under an electric field

Date

1998-01-01

Author

Sari, H
Ergun, Y
Elagoz, S
Kasapoglu, E
Sokmen, I
Tomak, Mehmet

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The effects of an applied electric field on subband energies and excitonic binding for a graded GaAlAs quantum well are calculated variationally within the effective mass approximation. The very sensitive dependence of subband energies on the applied field is calculated using a model potential profile and exact electron and hole wavefunctions. Our calculations have revealed the dependence of the energy shifts of subbands, and excitonic binding on the field direction in the graded quantum well. This permits control over tunneling which could be desirable for some applications. (C) 1998 Academic Press Limited.

Subject Keywords

Electrical and Electronic Engineering, General Materials Science, Condensed Matter Physics

URI

https://hdl.handle.net/11511/48685

Journal

SUPERLATTICES AND MICROSTRUCTURES

DOI

https://doi.org/10.1006/spmi.1996.0149

Collections

Department of Physics, Article

Citation Formats

H. Sari, Y. Ergun, S. Elagoz, E. Kasapoglu, I. Sokmen, and M. Tomak, “Subband structure and excitonic binding of graded GaAs/Ga1-xAlxAs quantum wells under an electric field,” SUPERLATTICES AND MICROSTRUCTURES, vol. 23, no. 5, pp. 1067–1074, 1998, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/48685.