Bismuth doping of graphene

Date

2010-02-22

Author

Akturk, Olcay Uezengi
Tomak, Mehmet

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In this work, we have studied bismuth as a dopant in graphene using density functional theory (DFT). We find that bismuth is weakly physisorbed within DFT. On the other hand, we show that bismuth n-dopes graphene when it is substitutional. We observe that local density approximation results give higher substitutional energy than that of generalized gradient approximation. The electronic structure of graphene is changed when Bi is substitutional.

Subject Keywords

Physics and Astronomy (miscellaneous)

URI

https://hdl.handle.net/11511/35865

Journal

APPLIED PHYSICS LETTERS

DOI

https://doi.org/10.1063/1.3334723

Collections

Department of Physics, Article

Citation Formats

O. U. Akturk and M. Tomak, “Bismuth doping of graphene,” APPLIED PHYSICS LETTERS, vol. 96, no. 8, pp. 0–0, 2010, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35865.